Investigation of interfacial oxidation control using sacrificial metallic Al and la passivation layers on InGaAs

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  Brennan, Barry ^a   Milojevic, Marko ^a   Contreras Guerrero, Roccio ^b   Kim, Hyun Chul ^a   Lopez Lopez, Maximo ^b   Kim, Jiyoung ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ECOLOGY; GALLIUM; OXIDATION; PHOTOELECTRONS; SEMICONDUCTING INDIUM; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALD GROWTH; CLEAN SURFACES; DETECTION LIMITS; EFFUSION CELLS; GROUP III; METAL BONDS; MONOCHROMATIC X-RAYS; NATIVE OXIDES; PASSIVATION LAYER; SEMICONDUCTOR-METAL INTERFACES; SUBSTRATE ATOM;

METALLIC COMPOUNDS;

EID: 84864269226     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4721276     Document Type: Article

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