Thermal stability of lanthanum in hafnium-based gate stacks

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Medina Montes, M I ^a,b   Selvidge, M V ^a   Herrera Gomez, A ^a,b   Aguirre Tostado, F S ^a   Quevedo Lopez, M A ^a,c   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

^b CINVESTAV Unidad Que taro   (Mexico)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DEPTH PROFILE; DIELECTRIC STACK; GATE STACKS; HIGH-RESOLUTION ANGLE-RESOLVED; METAL GATE; THERMAL STABILITY; THERMAL TREATMENT; WORK FUNCTION TUNING;

HAFNIUM; HAFNIUM COMPOUNDS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON COMPOUNDS; STOICHIOMETRY; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE; WORK FUNCTION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349304389     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3190505     Document Type: Article

References (22)

1. P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B. H. Lee, J. G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006 (IEEE Cat. No. 06CH37807C), San Francisco, CA, p. 4.
2. H. N. Alshareef, M. Quevedo-Lopez, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 0003-6951 89, 232103 (2006). 10.1063/1.2396918 (Pubitemid 44907244)
3. X. P. Wang, M. F. Li, C. Ren, X. F. Yu, C. Shen, H. H. Ma, A. Chin, C. X. Zhu, J. Ning, M. B. Yu, and D. L. Kwong, IEEE Electron Device Lett. 0741-3106 27, 31 (2006). 10.1109/LED.2005.859950
4. V. Narayanan, V. K. Paruchuri, N. A. Bojarczuk, B. P. Linder, B. Doris, Y. H. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J. P. Locquet, D. L. Lacey, Y. Wang, P. E. Batson, P. Ronsheim, R. Jammy, M. P. Chudzik, M. Ieong, S. Guha, G. Shahidi, and T. C. Chen, Tech. Dig. VLSI Symp. 2006 (IEEE Cat. No. 06CH37743C), Honolulu, HI, p. 2.
5. A. Herrera-Gomez, J. T. Grant, P. Cumpson, M. Jenko, F. S. Aguirre-Tostado, C. R. Brundle, T. Conard, G. Conti, C. S. Fadley, J. Fulghum, K. Kobayashi, L. Köver, H. Nohira, R. L. Opila, S. Oswald, R. Paynter, R. M. Wallace, W. S. M. Werner, and J. Wolstenholme, Surf. Interface Anal. 0142-2421 (in print).
6. W. Smekal, W. S. M. Werner, and C. J. Powell, Surf. Interface Anal. 0142-2421 37, 1059 (2005). 10.1002/sia.2097
7. C. J. Powell and A. Jablonski, National Institute of Standards and Technology, 2001. The TPP (Tanuma, Powell, and Penn) model was employed as the source for the inelastic mean free path. The attenuation lengths employed in this study were obtained from tables provided by the Standard Reference Database 82, Version 1.0.
8. A. Herrera-Gomez, " Simultaneous data fitting in ARXPS.," Internal Report. CINVESTAV-Unidad Queretaro. See http://www.qro.cinvestav.mx/ ~aanalyzer/SimultaneousFitting.pdf.
9. A. Herrera-Gomez, " Self consistent ARXPS analysis for multilayer conformal films with abrupt interfaces.," Internal Report. CINVESTAV-Unidad Queretaro, see http://www.qro.cinvestav.mx/~aanalyzer/ arxpsAnalysisSharpIntefaces.pdf.
10. M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 87, 262902 (2005). 10.1063/1.2150586 (Pubitemid 43032039)
11. M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace and B. E. Gnade, J. Vac. Sci. Technol. A 0734-2101 20, 1891 (2002). 10.1116/1.1507343
12. K. R. Williams, K. Gupta and M. Wasilik, J. Microelectromech. Sys., 12, 761 (2003). 10.1109/JMEMS.2003.820936
13. M. I. Medina-Montes, M.S. thesis, Centro de Investigación y de Estudios Avanzados del Instituto Polit́cnico Nacional, November 2007.
14. A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, P. D. Kirsch, M. J. Kim, and R. M. Wallace, J. Appl. Phys. 0021-8979 104, 103520 (2008). 10.1063/1.3021051
15. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, J. Appl. Phys. 0021-8979 101, 114108 (2007). 10.1063/1.2743818 (Pubitemid 46938585)
16. A deliberate sample position optimization procedure was employed to ensure that the sample rotation axis, x-ray spot centroid, and photoelectron analyzer axis were coincident.
17. See F. S. Aguirre-Tostado, contribution in Ref..
18. P. S. Lysaght, J. Barnett, G. I. Bersuker, J. C. Woicik, D. A. Fischer, and B. J. Foran, Appl. Phys. (Berlin) 0340-3793 101, 24105 (2007).
19. D. F. Mullica, H. O. Perkinsa, C. K. C. Lok, and V. Young, J. Electron Spectrosc. Relat. Phenom. 0368-2048 61, 337 (1993). 10.1016/0368-2048(93)80024-G
20. A. Herrera-Gómez, A. Hegedus, and P. L. Meissner, Appl. Phys. Lett. 0003-6951 81, 1014 (2002) (and references therein). 10.1063/1.1494121 (Pubitemid 34945753)
21. P. Cumpson, invited talk at The 47th IUVSTA Workshop on Angle-Resolved XPS, Riviera Maya, Mexico, 26-30 March 2007 (unpublished).
22. P. Sivasubramani, T. S. Boscke, J. Huang, C. D. Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R. Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee, and R. Jammy, Tech. Dig. VLSI Symp. 2007, Kyoto, Japan, p. 68.