Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2O 3 deposited as an interface passivation layer on GaAs MOS devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 6, 2011, Pages

  Yum, J H ^a,b   Akyol, T ^a   Ferrer, D A ^a   Lee, J C ^a   Banerjee, S K ^a   Lei, M ^c   Downer, M ^c   Hudnall, Todd W ^d   Bielawski, C W ^e   Bersuker, G ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Texas State University   (United States)

^e University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM BOND; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; GAAS; GAAS SUBSTRATES; HIGH ENERGY; HIGH RESOLUTION; HIGH THERMAL STABILITY; INTERFACE PASSIVATION; INTERFACIAL OXIDES; MONOCHROMATIC X-RAYS; PHYSICAL CHARACTERISTICS; POST DEPOSITION ANNEALING; SELF-CLEANING EFFECTS; SURFACE OXIDE;

ALUMINUM; ATOMIC LAYER DEPOSITION; BERYLLIUM; GALLIUM ARSENIDE; GATE DIELECTRICS; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING GALLIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84255166734     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3628546     Document Type: Article

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