Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition

Applied Physics Letters

Volumn 97, Issue 16, 2010, Pages

  Liu, Yiqun ^a   Xu, Min ^b   Heo, Jaeyeong ^a   Ye, Peide D ^b   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALLINE; CRYSTALLINE PERFECTION; CUBIC STRUCTURE; DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERIZATION; GAAS; GAAS(1 0 0); HETEROEPITAXY; INTERFACE STATE DENSITY; POLYCRYSTALLINE; SI (1 1 1);

AMORPHOUS SILICON; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; LATTICE MISMATCH; OXIDE FILMS; SEMICONDUCTING GALLIUM; SULFUR; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 77958485543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3504254     Document Type: Article

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