A high performance In0.53Ga0.47 As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters

Volumn 94, Issue 1, 2009, Pages

  Zhu, Feng ^a   Zhao, Han ^a   Ok, I ^a   Kim, H S ^a   Yum, J ^a   Lee, Jack C ^a   Goel, Niti ^b   Tsai, W ^b   Gaspe, C K ^c   Santos, M B ^c  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

^c UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MOS DEVICES; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS;

CHANNEL MOBILITIES; DEVICE DESIGNS; DRIVE CURRENTS; GATE OXIDES; IN0.53GA0.47AS; INTERFACE QUALITIES; PEAK TRANSCONDUCTANCES; SEMICONDUCTOR FIELD EFFECTS; SILICON INTERFACES; TRANSISTOR CHARACTERISTICS;

TRANSISTORS;

EID: 58149489139     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068752     Document Type: Article

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