Gate capacitance modeling and diameter-dependent performance of nanowire MOSFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 1037-1045

  Lee, Yeonghun ^a   Kakushima, Kuniyuki ^a   Natori, Kenji ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ballistic transport; gate capacitance; injection velocity; nanowire metal oxide semiconductor field effect transistors (NW MOSFETs)

Indexed keywords

BALLISTIC TRANSPORTS; CAPACITANCE MODEL; DENSITY OF STATE; EFFECTIVE MASS APPROXIMATION; GATE CAPACITANCE; INAS; INJECTION VELOCITY; INTRINSIC GATE DELAY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NANOWIRE MOSFETS; ON-CURRENTS;

BALLISTICS; CAPACITANCE; INDIUM ARSENIDE; INVERSION LAYERS; NANOWIRES; SILICON; TRANSPORT PROPERTIES; VELOCITY;

MOSFET DEVICES;

EID: 84862790019     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2185701     Document Type: Article

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