Theoretical study of carrier transport in silicon nanowire transistors based on the multisubband Boltzmann transport equation

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2886-2897

  Jin, Seonghoon ^a,b   Fischetti, Massimo V ^a   Tang, Ting Wei ^a  

^a University of Massachusetts Amherst   (United States)

^b SYNOPSYS INC   (United States)

Author keywords

Boltzmann transport equation (BTE); Intersubband transition; Microscopic scattering; Quantum wires; Quasi ballistic transport; Silicon nanowire transistors (SNWTs)

Indexed keywords

BALLISTICS; ENERGY CONSERVATION; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PERIODIC STRUCTURES; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; REAL TIME SYSTEMS; SCATTERING; SILICON; SURFACE ROUGHNESS; TRANSISTORS;

BOLTZMANN TRANSPORT EQUATION (BTE); INTERSUBBAND TRANSITION; MICROSCOPIC SCATTERING; QUANTUM WIRES; QUASI-BALLISTIC TRANSPORT; SILICON NANOWIRE TRANSISTORS (SNWTS);

BOLTZMANN EQUATION;

EID: 56549124079     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005172     Document Type: Article

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