Quantum capacitance in scaled down III-V FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Jin, Donghyun ^a   Kim, Daehyun ^a   Kim, Taewoo ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE SCALING; EXPERIMENTAL MEASUREMENTS; GATE CAPACITANCE; GATE LENGTH; INAS; OPERATIONAL RANGE; QUANTUM CAPACITANCE; SIGNIFICANT IMPACTS;

ELECTRON DEVICES; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SEMICONDUCTING INDIUM;

CAPACITANCE;

EID: 77952365692     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424312     Document Type: Conference Paper

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