Ellipsoidal band structure effects on maximum ballistic current in silicon nanowires

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Mori, Nobuya ^a,c   Minari, Hideki ^a,c   Uno, Shigeyasu ^b,c   Hattori, Junichi ^b,c  

^a OSAKA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC CURRENT; BAND STRUCTURE EFFECTS; EFFECTIVE MASS APPROXIMATION; GEOMETRIC MEAN; HARMONIC MEAN; IN-PLANE; ISOTROPIC APPROXIMATIONS; ISOTROPIC MODELS; MAXIMUM CURRENT DENSITY; MODEL APPROACH; QUANTUM LIMIT; SILICON NANOWIRES; SUB-BANDS;

BALLISTICS; COMPUTATIONAL FLUID DYNAMICS; NANOWIRES;

HARMONIC ANALYSIS;

EID: 79955376517     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DN09     Document Type: Article

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