Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 411-416

  Roldan J B ^a   Godoy, Andrés ^a   Gámiz, Francisco ^a   Balaguer, M ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Gate all around MOSFET (GAA MOSFET); Inversion charge centroid; Inversion charge model; Inversion charge modelling including quantum effects; Silicon on insulator (SOI); Surrounding gate transistor (SGT)

Indexed keywords

GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; QUANTUM THEORY; SCHRODINGER EQUATION; SILICON ON INSULATOR TECHNOLOGY;

INVERSION CHARGE MODEL; QUANTUM EFFECTS; SURROUNDING GATE TRANSISTOR;

MOSFET DEVICES;

EID: 37749036720     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911096     Document Type: Article

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