Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 904-908

  Pal, Himadri S ^a   Cantley, Kurtis D ^b   Ahmed, Shaikh Shahid ^c   Lundstrom, Mark S ^a,d  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c SOUTHERN ILLINOIS UNIVERSITY   (United States)

^d Purdue University   (United States)

Author keywords

Capacitance; Inversion layers; Quantum effect; Subband energy

Indexed keywords

BAND STRUCTURE; CAPACITANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

CHANNEL STRUCTURE; INVERSION LAYERS; QUANTUM EFFECT; SUBBAND ENERGY;

MOSFET DEVICES;

EID: 40949165797     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.914830     Document Type: Article

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