Quantum effects on the gate capacitance of trigate SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3231-3238

  Granzner, Ralf ^a   Thiele, Stefan ^a   Schippel, Christian ^a   Schwierz, Frank ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

2 D Schr dinger Poisson; Gate capacitance; quantum capacitance; quantum effects; silicon nanowires; trigate MOSFET

Indexed keywords

GATE CAPACITANCE; QUANTUM CAPACITANCE; QUANTUM EFFECTS; SILICON NANOWIRES; TRI-GATE MOSFET;

FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; MOSFET DEVICES; NANOWIRES; POISSON EQUATION; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE;

EID: 78650012653     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2077639     Document Type: Article

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