Effectiveness of Ta addition on the performance of Ru diffusion barrier in Cu metallization

Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

  Chen, Chun Wei ^a   Chen, J S ^a   Jeng, Jiann Shing ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FAR EAST UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; METALLIZING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON COMPOUNDS; SUBSTRATES; TANTALUM; THICK FILMS;

AMORPHOUS STRUCTURES; ANNEALED STATES; BARRIER PERFORMANCES; CU METALLIZATION; FAILURE MECHANISMS; METALLIZATION; RU FILMS; RU THIN FILMS; SI SUBSTRATES; STACKING LAYERS; TA FILMS; UNDERLAYERS;

COPPER;

EID: 54949094777     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2999348     Document Type: Article

References (23)

1. S. P. Murarka, Mater. Sci. Eng., R., 19, 87 (1997).
2. E. R. Weber, Appl. Phys. A, 30, 1 (1983).
3. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc., 133, 1242 (1986).
4. International Technology Roadmap for Semiconductors-2006 Updates, http://www.itrs.net/Links/2006Update/FinalToPost/09_Interconnect2006Update.pdf (April 10, 2008).
5. C. C. Chang, J. S. Jeng, and J. S. Chen, Thin Solid Films, 413, 46 (2002).
6. Binary Alloy Phase Diagrams, 2nd ed., T. B. Massalski, Editor-in-Chief, AMS International, Materials Park, OH (1990).
7. M. W. Lane, C. E. Murray, F. R. McFeely, P. M. Vereecken, and R. Rosenberg, Appl. Phys. Lett., 83, 2330 (2003).
8. H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, S. Hosaka, and Y. Shimogaki, Appl. Surf. Sci., 252, 3938 (2006).
9. D. Josell, D. Wheeler, C. Witt, and T. P. Moffat, Electrochem. Solid-State Lett., 6, C143 (2003).
10. R. Chan, T. N. Arunagiri, Y. Zhang, O. Chyan, R. M. Wallace, M. J. Kim, and T. Q. Hurd, Electrochem. Solid-State Lett., 7, G154 (2004).
11. M. Damayanti, T. Sritharan, S. G. Mhaisalkar, and Z. H. Gan, Appl. Phys. Lett., 88, 044101 (2004).
12. S.-H. Kwon, O.-K. Kwon, J.-S. Min, and S.-W. Kang, J. Electrochem. Soc., 153, G578 (2006).
13. M. Thompson and L. Doolittle, RUMP-RBS Analysis and Simulation Package [v 4.00 (beta)], Computer Graphic Service, Ltd. (February 7, 2008).
14. T.-Y. Lin, H.-Y. Cheng, T.-S. Chin, C.-F. Chiu, and J.-S. Fang, Appl. Phys. Lett., 91, 152908 (2007).
15. C. M. Liu, W. L. Liu, W. J. Chen, S. H. Hsieh, T. K. Tsai, and L. C. Yang, J. Electrochem. Soc., 152, G234 (2005).
16. M. Damayanti, T. Sritharan, S. G. Mhaisalkar, E. Phoon, and L. Chan, J. Mater. Res., 22, 2505 (2007).
17. K. S. Gadre, T. L. Alford, and J. W. Mayer, Appl. Phys. Lett., 79, 3260 (2001).
18. K.-L. Ou, M.-H. Lin, and S.-Y. Chiou, Electrochem. Solid-State Lett., 7, G272 (2004).
19. P. Majumder and C. G. Takoudis, Appl. Phys. Lett., 91, 162108 (2007).
20. J. S. Chen and J. L. Wang, J. Electrochem. Soc., 147, 1940 (2000).
21. M. Abe, M. Tada, H. Ohtake, N. Furutake, M. Narihiro, K. Arai, T. Takeuchi, S. Saito, T. Taiji, K. Motoyama, Tech. Dig.-Int. Electron Devices Meet., 2005, 77.
22. Thermochemical Data of Pure Substances, 3rd ed., I. Barin, Editor, VCH, New York (1995).
23. C. J. Liu and J. S. Chen, Appl. Phys. Lett., 80, 2678 (2002).