Influence of crystal orientation of Ru under-layer on initial growth of copper chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 8-11, 2006, Pages

  Kim, Hoon ^a   Kojima, Yasuhiko ^b   Sato, Hiroshi ^b   Yoshii, Naoki ^b   Hosaka, Shigetoshi ^b   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

Crystal orientation; Cu chemical vapor deposition; Interconnect; Lattice misfit; Nucleation; Reliability; Ru; Seed layer; Texture; Wettability

Indexed keywords

COPPER; CRYSTAL ORIENTATION; NUCLEATION; RELIABILITY; RUTHENIUM; SPUTTERING; TEXTURES;

INTERCONNECT; LATTICE MISFIT; SEED LAYER; WETTABILITY;

CHEMICAL VAPOR DEPOSITION;

EID: 33645978118     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L233     Document Type: Article

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