Formation of highly reliable Cu/low-k interconnects by using CVD Co barrier in dual damascene structures

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Jung, Hye Kyung ^a   Lee, Hyun Bae ^a   Tsukasa, Matsuda ^a   Jung, Eunji ^a   Yun, Jong Ho ^a   Lee, Jong Myeong ^a   Choi, Gil Heyun ^a   Choi, Siyoung ^a   Chung, Chilhee ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

BEOL; Co; Cu; CVD; Dual Damascene; Electromigration (EM)

Indexed keywords

32-NM NODE; BARRIER LAYERS; BARRIER METALS; BEOL; CO FILMS; CU ATOMS; CU/LOW-K INTERCONNECTS; DUAL DAMASCENE; DUAL DAMASCENE STRUCTURES; METAL LINE; RC DELAY; STEP COVERAGE; VIA FILLING;

ELECTROMIGRATION; NANOTECHNOLOGY; TANTALUM; TANTALUM COMPOUNDS;

COBALT;

EID: 79959297545     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784492     Document Type: Conference Paper

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