Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 1099-1105

  Datta, Arindom ^a   Nam, Ki Tae ^a   Kim, Soo Hyun ^a   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER PERFORMANCE; BARRIER PROPERTIES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CU DIFFUSION; CU METALLIZATION; INTERLAYER THICKNESS; LAYER THICKNESS; PREANNEALING; REDUCING PROCESS; SECCO-ETCHING; SEQUENTIAL SPUTTERING; SHEET RESISTANCE MEASUREMENTS; TEMPERATURE RANGE; TIN LAYERS;

DIFFUSION BARRIERS; GRAIN BOUNDARIES; OPTIMIZATION; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM;

EID: 0037100825     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486039     Document Type: Article

References (15)

1. S. P. Murarka, Mater. Sci. Eng., R. 19, 87 (1997). msr MIGIEA 0927-796X
2. S. P. Murarka and S. W. Hymes, Crit. Rev. Solid State Mater. Sci. 20, 87 (1995). ccr CCRSDA 1040-8436
3. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. 133, 1243 (1986). jes JESOAN 0013-4651
4. A. E. Kaloyeros and E. Eisenbraun, Annu. Rev. Mater. Sci. 30, 363 (2000). arm ARMSCX 0084-6600
5. K.-C. Park, K.-B. Kim, I. J. M. M. Raaijmakers, and K. Ngan, J. Appl. Phys. 80, 5674 (1996). jap JAPIAU 0021-8979
6. C. G. Faltermeier, C. G. Goldberg, M. Jones, A. Upham, D. Manger, G. Peterson, J. Lau, A. E. Kaloyeros, B. Arkles, and A. Paranjpe, J. Electrochem. Soc. 144, 1002 (1997). jes JESOAN 0013-4651
7. S.-H. Kim, M. S. thesis, Seoul National University, 1999.
8. W. Sinke, G. P. A. Frijlink, and F. W. Saris, Appl. Phys. Lett. 47, 471 (1985). apl APPLAB 0003-6951
9. V. Fortin, S. C. Gujrathi, G. Gagnon, R. Gavin, J. F. Currie, L. Ouellet, and Y. Tremblay, J. Vac. Sci. Technol. B 17, 423 (1999). jvb JVTBD9 0734-211X
10. M. A. Nicolet and M. Bartur, J. Vac. Sci. Technol. 19, 786 (1981). jvs JVSTAL 0022-5355
11. K.-C. Park and K.-B. Kim, J. Electrochem. Soc. 142, 3109 (1995). jes JESOAN 0013-4651
12. K.-H. Kim, S.-J. Im, S.-H. Kim and K.-B. Kim, Proc. Advanced Metallization Conference 1999, Orlando, FL, p. 227.
13. K. T. Nam, A. Datta, S.-H. Kim, and K.-B. Kim, Appl. Phys. Lett. 79, 2549 (2001). apl APPLAB 0003-6951
14. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era (Lattice, Sunset Beach, CA, 1987), Vol. 1, p. 553.
15. J. O. Olowolafe, J. Li, J. W. Mayer, and E. G. Colgan, Appl. Phys. Lett. 58, 469 (1991). apl APPLAB 0003-6951