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Volumn 55, Issue 1-4, 2001, Pages 297-303

Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DIFFUSION; ELECTROLESS PLATING; GRAIN BOUNDARIES; METALLIZING; NANOSTRUCTURED MATERIALS; THIN FILMS;

EID: 0034830082     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00460-3     Document Type: Article
Times cited : (65)

References (17)
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  • 7
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    • Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization
    • to be published
    • A. Kohn, M. Eizenberg, Y. Shacham-Diamand, Y Sverdlov, Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization, Mater. Sci. Eng. A, to be published.
    • Mater. Sci. Eng. A
    • Kohn, A.1    Eizenberg, M.2    Shacham-Diamand, Y.3    Sverdlov, Y.4
  • 8
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    • Podlaha, E.J.1    Landolt, D.2
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    • (1999) J. Electrochem. Soc. , vol.146 , pp. 1455-1460
    • Kim, S.-H.1    Chung, D.-S.2    Park, K.-C.3    Kim, K.-B.4    Min, S.-H.5
  • 14
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    • A.E. Kaloyeros, X. Chen, T. Stark, K. Kumar, S.-C. Seo, G.G. Peterson, H.L. Frisch, B. Arkles, J. Sullivan, Tantalum nitride films grown by inorganic low temperature chemical vapor deposition: diffusion barrier properties in copper metallization, J. Electrochem. Soc. 146 (1999) 170-176.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.