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Volumn , Issue , 2006, Pages 187-190
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Physical, electrical, and reliability characterization of Ru for Cu interconnects
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Author keywords
[No Author keywords available]
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Indexed keywords
BACK-END OF LINE;
BI LAYERS;
BREAKDOWN TESTS;
CHEMICAL VAPORS;
CU INTERCONNECTS;
CURRENT-VOLTAGE;
DUAL DAMASCENE;
ELECTRICAL PERFORMANCES;
ELECTROMIGRATION (EM);
INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE;
LOW-K INTEGRATION;
RELIABILITY CHARACTERIZATION;
THIN-FILM CHARACTERIZATION;
VOLTAGE SWEEP;
X-RAY DIFFRACTION;
COPPER;
COPPER ALLOYS;
METALLIZING;
OPTICAL INTERCONNECTS;
TECHNOLOGY;
THICK FILMS;
VAPORS;
X RAY ANALYSIS;
CHEMICAL VAPOR DEPOSITION;
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EID: 50249098204
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IITC.2006.1648684 Document Type: Conference Paper |
Times cited : (44)
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References (10)
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