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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1321-1326

Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

(4) Kim, H a Cabral, C a Lavoie, C a Rossnagel, S M a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; HYDROGEN; LIGHT SCATTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; TANTALUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ATOMIC HYDROGEN; BILAYER STRUCTURES; DIFFUSION BARRIER PROPERTIES; ELASTIC LIGHT SCATTERING; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; RESISTANCE ANALYSIS; TRANSITION METAL THIN FILMS;

TANTALUM;

EID: 0035982535 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1486233 Document Type: Conference Paper

Times cited : (125)

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