Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M = Ru, Cr, and Zr) between two TiN films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 804-813

  Kim, Soo Hyun ^a   Nam, Ki Tae ^a   Datta, Arindom ^a,b   Kim, Hyun Mi ^a   Kim, Ki Bum ^a   Kang, Dae Hwan ^a  

^a Seoul National University   (South Korea)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; FILMS; FREE ENERGY; GRAIN BOUNDARIES; METALLIZING; MULTILAYERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

METAL-OXIDE FORMATION;

TITANIUM NITRIDE;

EID: 0037274003     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562645     Document Type: Article

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