Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier

Thin Solid Films

Volumn 517, Issue 5, 2009, Pages 1645-1649

  Henderson, Lucas B ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Amorphous films; Bias temperature stress; Copper diffusion barrier; Ruthenium alloy; Time dependent dielectric breakdown

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FAILURE ANALYSIS; OPTICAL INTERCONNECTS; PHOSPHORUS; QUALITY ASSURANCE; RUTHENIUM; RUTHENIUM ALLOYS; SAFETY FACTOR; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; TANNING; TANTALUM COMPOUNDS; VAPORS;

BIAS-TEMPERATURE STRESS; CHEMICAL VAPOR DEPOSITED; COPPER DIFFUSION BARRIER; COPPER DIFFUSION BARRIERS; COPPER INTERCONNECT; CU DIFFUSIONS; E MODELS; FUTURE TECHNOLOGIES; MULTIPLE MODELS; PHYSICAL VAPOR DEPOSITED; SCHOTTKY; TEMPERATURE STRESSES; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

AMORPHOUS FILMS;

EID: 56949090810     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.009     Document Type: Article

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