Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

IEEE Transactions on Electron Devices

Volumn 59, Issue 6, 2012, Pages 1636-1643

  Poljak, Mirko ^a,b   Jovanović, Vladimir ^c   Grgec, Dalibor ^d   Suligoj, Tomislav ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF ZAGREB   (Croatia)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d Polytechnic of Zagreb   (Croatia)

Author keywords

Indium gallium arsenide (InGaAs); low field mobility; physics based modeling; quantum confinement; ultrathin body (UTB)

Indexed keywords

ALLOY DISORDER; EFFECTIVE MASS; EXPERIMENTAL DATA; INDIUM-GALLIUM-ARSENIDE (INGAAS); INTERFACE PROPERTY; INTERFACE QUALITY; LOW FIELD MOBILITY; MOSFETS; NON-POLAR; OPTICAL PHONONS; PHYSICS-BASED MODELING; SILICON-ON-INSULATOR DEVICES; THICKNESS FLUCTUATIONS; ULTRA-THIN; ULTRATHIN BODY;

ELECTRON MOBILITY; GALLIUM ARSENIDE; MOSFET DEVICES; QUANTUM CONFINEMENT; SURFACE ROUGHNESS;

SEMICONDUCTING INDIUM;

EID: 84861346434     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2189217     Document Type: Article

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