High mobility III-V-on-insulator MOSFETs on Si with ALD-Al 2O3 BOX layers

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 235-236

  Yokoyama, M ^a   Urabe, Y ^b   Yasuda, T ^b   Takagi, H ^b   Ishii, H ^b   Miyata, N ^b   Yamada, H ^c   Fukuhara, N ^c   Hata, M ^c   Sugiyama, M ^a   Nakano, Y ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; BOX LAYERS; BURIED OXIDE LAYERS; DEVICE PERFORMANCE; GATE OPERATION; HIGH ELECTRON MOBILITY; HIGH MOBILITY; MOSFETS;

ALUMINUM; ELECTRON MOBILITY; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957872501     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556241     Document Type: Conference Paper

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4. H. Ishii et al., APEX, Vol. 2, (2009) pp. 242.
5. M. Yokoyama, et al, VLSI Symp. (2009) pp. 242.
6. M. Yokoyama, et al., APEX, vol. 2 (2009) pp. 124501.
7. H.Takagi et al., The 14th IEEE International Conference on Micro Electro Mechanical Systems 2001, Vo. 22, 60, 2001.