Improved Monte Carlo algorithm for the simulation of doped AlInAs/GaInAs HEMT's

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 250-253

  Mateos, Javier ^a   Gonzáalez, Tomás ^a   Pardo, Daniel ^a   Hoel, Virginie ^b,c   Happy, Henri ^b,c   Cappy, Alain ^b,c  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b CNRS   (France)

^c Département Hyperfréquences et Semiconducteurs   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ALUMINUM COMPOUNDS; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FERMI LEVEL; HETEROJUNCTIONS; MONTE CARLO METHODS; POISSON DISTRIBUTION; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

ELECTRON DEGENERACY; NONEQUILIBRIUM SCREENING; QUANTUM EFFECTS; SEMICONDUCTING ALUMINUM INDIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033909161     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817592     Document Type: Article

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