Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETs, ultrathin-body SOI MOSFETs and double-gate MOSFETs for different orientations

MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings

Volumn , Issue , 2010, Pages 48-53

  Poljak, M ^a   Jovanovic V ^a,b   Suligoj, T ^a  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SURFACES; COMPREHENSIVE STUDIES; DOUBLE-GATE DEVICE; DOUBLE-GATE MOSFETS; DOWN-SCALING; FORM FACTORS; MOBILITY BEHAVIOR; MOMENTUM RELAXATION; MOSFETS; PHYSICAL MECHANISM; QUANTUM-MECHANICAL MODELING; SOI-MOSFETS; ULTRA-THIN-BODY;

APPROXIMATION THEORY; ELECTRON MOBILITY; INFORMATION TECHNOLOGY; MICROELECTRONICS; MOSFET DEVICES; PHONONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956373413     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. J.-P. Colinge (Ed.), FinFETs and Other Multi-Gate Transistors, Springer, New York, USA, 2008.
2. International technology roadmap for semiconductors, ITRS-PIDS, 2008 Edition Update, http://www.itrs.net
3. D. Hisamoto et al., "FinFET - a self-aligned double-gate MOSFET Scalable to 20 nm", IEEE Trans. Electron Dev., Vol. 47, No. 12, pp. 2320-2325, 2000.
4. D. Esseni et al., "Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs", IEEE Trans. Electron Dev., Vol. 50, pp. 2445-2455, 2003.
5. V. Sverdlov et al., "Volume inversion mobility in SOI MOSFETs for different thin body orientations", Solid-State Electronics, Vol. 51, pp. 299-305, 2007.
6. SOI-induced scattering", IEDM 2003 Tech. Digest, pp. 805-808, 2003.
7. G. Tsutsui et al., "Mobility enhancement due to volume inversion in (110)-oriented ultra-thin body double-gate MOSFETs with body thickness less than 5 nm", IEDM 2005 Tech. Digest, pp. 729-732, 2005.
8. M. Lundstrom, Fundamentals of Carrier Transport, 2nd edition, Cambridge University Press; 2000.
9. F. Stern, "Self-consistent results for n-type Si inversion layers", Phys. Rev. B, Vol. 5, pp. 4891-4899, 1972.
10. S. Takagi et al., "Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide- semiconductor field-effect transistors", J. App. Phys., Vol. 80, pp. 1567-1577, 1996.
11. S. Takagi et al., "On the universality of inversion layer mobility in Si MOSFETs: Part II - Effects of surface orientation", IEEE Trans. Electron Dev., Vol. 41, pp. 2363-2368, 1994.
12. P.Y. Yu and M. Cardona, Fundamentals of Semiconductors, 2nd edition, Springer-Verlag, Berlin, 1999.
13. M. Poljak et al., "Optimum body thickness of (111) - oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility", Proc. ISDRS 2009, p. TP-403, 2009.