Ultra-high aspect-ratio FinFET technology

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 870-876

  Jovanović, Vladimir ^a,b   Suligoj, Tomislav ^a   Poljak, Mirko ^a   Civale, Yann ^b   Nanver, Lis K ^b  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

(1 1 1) Channel; Carrier confinement; CMOS; FinFET; TMAH

Indexed keywords

ACTIVE PARTS; ANALOG APPLICATIONS; BULK SILICON; CARRIER CONFINEMENTS; CHANNEL CARRIERS; CURRENT DRIVABILITY; DOWN-SCALING; FINFETS; HIGH FREQUENCY HF; N-CHANNEL; ON STATE CURRENT; SILICON AREA; SOURCE/DRAIN SERIES RESISTANCES; SUBBAND ENERGIES; SUBTHRESHOLD; SURFACE ORIENTATION; TRANSISTOR CHANNELS; TRIGATE; ULTRA-HIGH; WIDTH RATIO;

ASPECT RATIO; ELECTRON MOBILITY; FORCED CONVECTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

FINS (HEAT EXCHANGE);

EID: 77954213627     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.021     Document Type: Conference Paper

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