Physics-based modeling of hole inversion-layer mobility in strained-SiGe-on-insulator

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2174-2182

  Pham, Anh Tuan ^a   Jungemann, Christoph ^b   Meinerzhagen, Bernd ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Heterostructure strained SiGe channel; Mobilitymodeling; pMOSFET; Silicon on insulator (SOI)

Indexed keywords

CALIBRATION; HETEROJUNCTIONS; HOLE MOBILITY; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

CHANNEL MOBILITY; HETEROSTRUCTURE STRAINED-SILICON GERMANIUM CHANNEL; HOLE INVERSION-LAYER MOBILITY;

MOSFET DEVICES;

EID: 41749116422     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902858     Document Type: Article

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