SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

Calculation of the electron mobility in III-V inversion layers with high- κ dielectrics

(6) O'Regan, T P a,c Fischetti, M V a Sore B b Jin, S a,d Magnus, W b Meuris, M b

a University of Massachusetts (United States)

b IMEC (Belgium)

c UNIVERSITY COLLEGE CORK (Ireland)

d SYNOPSYS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMONLY USED; DIELECTRIC LAYER; DIELECTRIC SCREENING; DYNAMIC SCREENING; FIXED INTERFACE CHARGES; GAAS SUBSTRATES; IN0.53GA0.47AS; INTERFACIAL MODES; INVERSION LAYER; LO PHONONS; LONGITUDINAL OPTICAL; METAL OXIDE SEMICONDUCTOR; METALLIC GATES; NON-POLAR; OPTICAL MODES; RELATIVE IMPACT; SCATTERING MECHANISMS; SCREENING MODELS; STATIC LIMITS; WAVE VECTOR;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; PHONONS; SCATTERING; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; SURFACE ROUGHNESS;

SUBSTRATES;

EID: 78650256238 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3500553 Document Type: Conference Paper

Times cited : (32)

References (51)

1
- 33748582367
- Silicon CMOS devices beyond scaling
- DOI 10.1147/rd.504.0339
- W. Haensch, E. Nowak, R. Dennard, P. Solomon, A. Bryant, O. Dokumaci, A. Kumar, X. Wang, J. Johnson, and M. Fischetti, IBM J. Res. Dev. IBMJAE 0018-8646 50, 339 (2006). 10.1147/rd.504.0339 (Pubitemid 44375468)
- (2006) IBM Journal of Research and Development , vol.50 , Issue.4-5 , pp. 339-361
- Haensch, W.¹ Nowak, E.J.² Dennard, R.H.³ Solomon, P.M.⁴ Bryant, A.⁵ Dokumaci, O.H.⁶ Kumar, A.⁷ Wang, X.⁸ Johnson, J.B.⁹ Fischetti, M.V.¹⁰

2
- 0038104277
- EDLEDZ 0741-3106. 10.1109/LED.2003.810888
- B. Doyle, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, A. Murthy, R. Rios, and R. Chau, IEEE Electron Device Lett. EDLEDZ 0741-3106 24, 263 (2003). 10.1109/LED.2003.810888
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 263
- Doyle, B.¹ Datta, S.² Doczy, M.³ Hareland, S.⁴ Jin, B.⁵ Kavalieros, J.⁶ Linton, T.⁷ Murthy, A.⁸ Rios, R.⁹ Chau, R.¹⁰

3
- 1842865629
- ICDMEN 8755-3996. 10.1109/MCD.2004.1263404
- E. Nowak, I. Aller, T. Ludwig, K. Kim, R. Joshi, C. Chuang, K. Bernstein, and R. Puri, IEEE Circuits Devices Mag. ICDMEN 8755-3996 20, 20 (2004). 10.1109/MCD.2004.1263404
- (2004) IEEE Circuits Devices Mag. , vol.20 , pp. 20
- Nowak, E.¹ Aller, I.² Ludwig, T.³ Kim, K.⁴ Joshi, R.⁵ Chuang, C.⁶ Bernstein, K.⁷ Puri, R.⁸

4
- 28344441012
- Self-aligned self assembly of multi-nanowire silicon field effect transistors
- DOI 10.1063/1.2112191, 163116
- C. Black, Appl. Phys. Lett. APPLAB 0003-6951 87, 163116 (2005). 10.1063/1.2112191 (Pubitemid 41717094)
- (2005) Applied Physics Letters , vol.87 , Issue.16 , pp. 1-3
- Black, C.T.¹

5
- 21644436369
- TDIMD5 0163-1918.
- E. -J. Yoon, S. -Y. Lee, S. -M. Kim, M. -S. Kim, S. H. Kim, L. Ming, S. Suk, K. Yeo, C. W. Oh, J. -d. Choe, D. Choi, D.-W. Kim, D. Park, and B.-I. Ryu, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 627.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 627
- Yoon, E.-J.¹ Lee, S.-Y.² Kim, S.-M.³ Kim, M.-S.⁴ Kim, S.H.⁵ Ming, L.⁶ Suk, S.⁷ Yeo, K.⁸ Oh, C.W.⁹ C. J, -D.¹⁰ Choi, D.¹¹ Kim -, D.W.¹² Park, D.¹³ Ryu -, B.I.¹⁴

6
- 18944389459
- TDIMD5 0163-1918.
- Z. Krivokapic, V. Moroz, W. Maszara, and M. Lin, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 18.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 18
- Krivokapic, Z.¹ Moroz, V.² Maszara, W.³ Lin, M.⁴

7
- 0034794354
- K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H.-S. P. Wong, Tech. Dig. VLSI Symp. 2001, 59.
- Tech. Dig. VLSI Symp. , vol.2001 , pp. 59
- Rim, K.¹ Koester, S.² Hargrove, M.³ Chu, J.⁴ Mooney, P.M.⁵ Ott, J.⁶ Kanarsky, T.⁷ Ronsheim, P.⁸ Ieong, M.⁹ Grill, A.¹⁰ Wong -, H.S.P.¹¹

8
- 78650262087
- TDIMD5 0163-1918.
- M. Yang, M. Ieong, L. Shi, K. Chan, V. Chan, A. Chou, E. Gusev, K. Jenkins, D. Boyd, Y. Ninomiya, D. Pendleton, Y. Surpris, D. Heenan, J. Ott, K. Guarini, C. D'Emic, M. Cobb, P. Mooney, B. To, N. Rovedo, J. Benedict, R. Mo, and H. Ng, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 18.7.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 1871
- Yang, M.¹ Ieong, M.² Shi, L.³ Chan, K.⁴ Chan, V.⁵ Chou, A.⁶ Gusev, E.⁷ Jenkins, K.⁸ Boyd, D.⁹ Ninomiya, Y.¹⁰ Pendleton, D.¹¹ Surpris, Y.¹² Heenan, D.¹³ Ott, J.¹⁴ Guarini, K.¹⁵ D'Emic, C.¹⁶ Cobb, M.¹⁷ Mooney, P.¹⁸ To, B.¹⁹ Rovedo, N.²⁰ more..

9
- 36149000642
- 3 as gate dielectric
- DOI 10.1109/LED.2007.906436
- Y. Xuan, Y. Wu, H. Lin, T. Shen, and P. Ye, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 935 (2007). 10.1109/LED.2007.906436 (Pubitemid 350111775)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.11 , pp. 935-938
- Xuan, Y.¹ Wu, Y.Q.² Lin, H.C.³ Shen, T.⁴ Ye, P.D.⁵

10
- 77951149425
- TDIMD5 0163-1918.
- C. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 457.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 457
- Lee, C.¹ Nishimura, T.² Saido, N.³ Nagashio, K.⁴ Kita, K.⁵ Toriumi, A.⁶

11
- 77951184452
- TDIMD5 0163-1918.
- D. Kuzum, T. Krishnamohan, A. Nainani, Y. Sun, P. Pianetta, H. -S. Wong, and K. Saraswat, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 453.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 453
- Kuzum, D.¹ Krishnamohan, T.² Nainani, A.³ Sun, Y.⁴ Pianetta, P.⁵ Wong, H.-S.⁶ Saraswat, K.⁷

12
- 41749085181
- A simulation study of the switching times of 22- and 17-nm gate-length SOI nFETs on high mobility substrates and Si
- DOI 10.1109/TED.2007.902864
- S. Laux, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 2304 (2007). 10.1109/TED.2007.902864 (Pubitemid 351492061)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2304-2320
- Laux, S.E.¹

13
- 34547876556
- 2 insulators: Does the electron mobility determine short channel performance?
- DOI 10.1143/JJAP.46.3265, Dielectric Thin Films for Future ULSI Devices
- T. O'Regan and M. Fischetti, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 3265 (2007). 10.1143/JJAP.46.3265 (Pubitemid 47256676)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.5 B , pp. 3265-3272
- O'Regan, T.¹ Fischetti, M.²

14
- 78650301618
- TDIMD5 0163-1918.
- P. Solomon and S. Laux, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2001, 5.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2001 , pp. 5
- Solomon, P.¹ Laux, S.²

15
- 0000884665
- PLRBAQ 0556-2805. 10.1103/PhysRevB.44.1880
- B. G. Frederick, G. Apai, and T. N. Rhodin, Phys. Rev. B PLRBAQ 0556-2805 44, 1880 (1991). 10.1103/PhysRevB.44.1880
- (1991) Phys. Rev. B , vol.44 , pp. 1880
- Frederick, B.G.¹ Apai, G.² Rhodin, T.N.³

16
- 0035504954
- JAPIAU 0021-8979. 10.1063/1.1405826
- M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. JAPIAU 0021-8979 90, 4587 (2001). 10.1063/1.1405826
- (2001) J. Appl. Phys. , vol.90 , pp. 4587
- Fischetti, M.V.¹ Neumayer, D.A.² Cartier, E.A.³

17
- 0342448761
- JAPNDE 0021-4922. 10.1143/JJAP.29.2017
- T. Matsuoka, E. Kobayashi, K. Taniguchi, C. Hamaguchi, and S. Sasa, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 29, 2017 (1990). 10.1143/JJAP.29.2017
- (1990) Jpn. J. Appl. Phys., Part 1 , vol.29 , pp. 2017
- Matsuoka, T.¹ Kobayashi, E.² Taniguchi, K.³ Hamaguchi, C.⁴ Sasa, S.⁵

18
- 0034904488
- PLRBAQ 0556-2805. 10.1103/PhysRevB.63.245313
- D. Anderson, N. Zakhleniuk, M. Babiker, B. Ridley, and C. Bennett, Phys. Rev. B PLRBAQ 0556-2805 63, 245313 (2001). 10.1103/PhysRevB.63.245313
- (2001) Phys. Rev. B , vol.63 , pp. 245313
- Anderson, D.¹ Zakhleniuk, N.² Babiker, M.³ Ridley, B.⁴ Bennett, C.⁵

19
- 0039737935
- JPSOAW 0022-3719. 10.1088/0022-3719/16/36/012
- F. Riddoch and B. Ridley, J. Phys. C JPSOAW 0022-3719 16, 6971 (1983). 10.1088/0022-3719/16/36/012
- (1983) J. Phys. C , vol.16 , pp. 6971
- Riddoch, F.¹ Ridley, B.²

20
- 50249185663
- TDIMD5 0163-1918.
- M. Fischetti, L. Wang, B. Yu, C. Sachs, P. Asbeck, Y. Taur, and M. Rodwell, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 109.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 109
- Fischetti, M.¹ Wang, L.² Yu, B.³ Sachs, C.⁴ Asbeck, P.⁵ Taur, Y.⁶ Rodwell, M.⁷

21
- 0000825552
- PRLAAZ 0950-1207. 10.1098/rspa.1937.0106
- H. Fröhlich, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 160, 230 (1937). 10.1098/rspa.1937.0106
- (1937) Proc. R. Soc. London, Ser. A , vol.160 , pp. 230
- Fröhlich, H.¹

22
- 78650268915
- http://www.ioffe.ru/SVA/NSM

23
- 0001582597
- PLRBAQ 0556-2805. 10.1103/PhysRevB.33.5595
- K. Yokoyama and K. Hess, Phys. Rev. B PLRBAQ 0556-2805 33, 5595 (1986). 10.1103/PhysRevB.33.5595
- (1986) Phys. Rev. B , vol.33 , pp. 5595
- Yokoyama, K.¹ Hess, K.²

24
- 0000964043
- RMPHAT 0034-6861. 10.1103/RevModPhys.53.745
- D. Chattopadhyay and H. J. Queisser, Rev. Mod. Phys. RMPHAT 0034-6861 53, 745 (1981). 10.1103/RevModPhys.53.745
- (1981) Rev. Mod. Phys. , vol.53 , pp. 745
- Chattopadhyay, D.¹ Queisser, H.J.²

25
- 0000541522
- PLRBAQ 0556-2805. 10.1103/PhysRevB.44.5527
- M. V. Fischetti, Phys. Rev. B PLRBAQ 0556-2805 44, 5527 (1991). 10.1103/PhysRevB.44.5527
- (1991) Phys. Rev. B , vol.44 , pp. 5527
- Fischetti, M.V.¹

26
- 4243227379
- PLRBAQ 0556-2805. 10.1103/PhysRevB.48.2244
- M. V. Fischetti and S. E. Laux, Phys. Rev. B PLRBAQ 0556-2805 48, 2244 (1993). 10.1103/PhysRevB.48.2244
- (1993) Phys. Rev. B , vol.48 , pp. 2244
- Fischetti, M.V.¹ Laux, S.E.²

27
- 0003448505
- (McGraw-Hill, New York).
- A. L. Fetter and J. D. Walecka, Quantum Theory of Many-Particle Systems (McGraw-Hill, New York, 1971).
- (1971) Quantum Theory of Many-Particle Systems
- Fetter, A.L.¹ Walecka, J.D.²

28
- 40949157889
- Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs
- DOI 10.1109/TED.2007.902712
- S. Jin, M. V. Fischetti, and T. -W. Tang, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 2191 (2007). 10.1109/TED.2007.902712 (Pubitemid 351485737)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2191-2203
- Jin, S.¹ Fischetti, M.V.² Tang, T.-W.³

29
- 6144269909
- SUSCAS 0039-6028. 10.1016/0039-6028(78)90507-1
- P. F. Maldague, Surf. Sci. SUSCAS 0039-6028 73, 296 (1978). 10.1016/0039-6028(78)90507-1
- (1978) Surf. Sci. , vol.73 , pp. 296
- Maldague, P.F.¹

30
- 0018482627
- Electrical properties of poly(2-vinylpyridine)-iodine films
- DOI 10.1016/0038-1098(79)90051-6
- K. Hess, Solid State Commun. SSCOA4 0038-1098 30, 797 (1979). 10.1016/0038-1098(79)90051-6 (Pubitemid 10413117)
- (1979) Solid State Communications , vol.30 , Issue.12 , pp. 797-799
- Audenaert, M.¹ Gusman, G.² Mehbod, M.³ Deltour, R.⁴ Noirhomme, B.⁵ Vander Donckt, E.⁶

31
- 2942702306
- EDLEDZ 0741-3106. 10.1109/LED.2004.828570
- R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 408 (2004). 10.1109/LED.2004.828570
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 408
- Chau, R.¹ Datta, S.² Doczy, M.³ Doyle, B.⁴ Kavalieros, J.⁵ Metz, M.⁶

32
- 21644435485
- TDIMD5 0163-1918.
- R. Kotlyar, M. Giles, P. Matagne, B. Obradovic, L. Shifren, M. Stettler, and E. Wang, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 391.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 391
- Kotlyar, R.¹ Giles, M.² Matagne, P.³ Obradovic, B.⁴ Shifren, L.⁵ Stettler, M.⁶ Wang, E.⁷

33
- 38149059787
- JAPIAU 0021-8979. 10.1063/1.2826951
- B. Laikhtman and M. Solomon, J. Appl. Phys. JAPIAU 0021-8979 103, 014501 (2008). 10.1063/1.2826951
- (2008) J. Appl. Phys. , vol.103 , pp. 014501
- Laikhtman, B.¹ Solomon, M.²

34
- 36248991844
- Impact of a nonideal metal gate on surface optical phonon-limited mobility in high-κ gated MOSFETs
- DOI 10.1109/TED.2007.907135
- R. Shah and M. De Souza, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 2991 (2007). 10.1109/TED.2007.907135 (Pubitemid 350123883)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.11 , pp. 2991-2997
- Shah, R.¹ De Souza, M.M.²

35
- 18444418038
- Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy
- DOI 10.1016/j.jcrysgro.2004.12.072, PII S0022024804020536, 13th International Conference on Molecular Beam Epitaxy
- T. Mozume and J. Kasai, J. Cryst. Growth JCRGAE 0022-0248 278, 178 (2005). 10.1016/j.jcrysgro.2004.12.072 (Pubitemid 40643339)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 178-182
- Mozume, T.¹ Kasai, J.²

36
- 0000247844
- APPLAB 0003-6951. 10.1063/1.93962
- T. P. Pearsall, R. Carles, and J. C. Portal, Appl. Phys. Lett. APPLAB 0003-6951 42, 436 (1983). 10.1063/1.93962
- (1983) Appl. Phys. Lett. , vol.42 , pp. 436
- Pearsall, T.P.¹ Carles, R.² Portal, J.C.³

37
- 34547827353
- PHRVAO 0031-899X. 10.1103/PhysRev.163.816
- F. Stern and W. E. Howard, Phys. Rev. PHRVAO 0031-899X 163, 816 (1967). 10.1103/PhysRev.163.816
- (1967) Phys. Rev. , vol.163 , pp. 816
- Stern, F.¹ Howard, W.E.²

38
- 0014832885
- PLRBAQ 0556-2805. 10.1103/PhysRevB.2.1024
- E. D. Siggia and P. C. Kwok, Phys. Rev. B PLRBAQ 0556-2805 2, 1024 (1970). 10.1103/PhysRevB.2.1024
- (1970) Phys. Rev. B , vol.2 , pp. 1024
- Siggia, E.D.¹ Kwok, P.C.²

39
- 0001603407
- PLRBAQ 0556-2805. 10.1103/PhysRevB.6.4605
- T. H. Ning and C. T. Sah, Phys. Rev. B PLRBAQ 0556-2805 6, 4605 (1972). 10.1103/PhysRevB.6.4605
- (1972) Phys. Rev. B , vol.6 , pp. 4605
- Ning, T.H.¹ Sah, C.T.²

40
- 77955741775
- APPLAB 0003-6951. 10.1063/1.3436645
- T. P. O'Regan, P. K. Hurley, B. Soŕe, and M. V. Fischetti, Appl. Phys. Lett. APPLAB 0003-6951 96, 213514 (2010). 10.1063/1.3436645
- (2010) Appl. Phys. Lett. , vol.96 , pp. 213514
- O'Regan, T.P.¹ Hurley, P.K.² Soŕe, B.³ Fischetti, M.V.⁴

41
- 84893264597
- JAPIAU 0021-8979. 10.1063/1.2802586
- S. Jin, M. V. Fischetti, and T. -w. Tang, J. Appl. Phys. JAPIAU 0021-8979 102, 083715 (2007). 10.1063/1.2802586
- (2007) J. Appl. Phys. , vol.102 , pp. 083715
- Jin, S.¹ Fischetti, M.V.² T. T, -W.³

42
- 85032069152
- RMPHAT 0034-6861. 10.1103/RevModPhys.54.437
- T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. RMPHAT 0034-6861 54, 437 (1982). 10.1103/RevModPhys.54.437
- (1982) Rev. Mod. Phys. , vol.54 , pp. 437
- Ando, T.¹ Fowler, A.B.² Stern, F.³

43
- 0019057882
- Influence of the image force on the band gap in semiconductors and insulatorsf
- DOI 10.1063/1.328366
- M. Kleefstra and G. C. Herman, J. Appl. Phys. JAPIAU 0021-8979 51, 4923 (1980). 10.1063/1.328366 (Pubitemid 11445345)
- (1980) Journal of Applied Physics , vol.51 , Issue.9 , pp. 4923-4926
- Kleefstra, M.¹ Herman, G.C.²

44
- 0348120415
- JPSOAW 0022-3719. 10.1088/0022-3719/4/14/022
- L. Hedin and B. I. Lundqvist, J. Phys. C JPSOAW 0022-3719 4, 2064 (1971). 10.1088/0022-3719/4/14/022
- (1971) J. Phys. C , vol.4 , pp. 2064
- Hedin, L.¹ Lundqvist, B.I.²

45
- 0001276540
- PLRBAQ 0556-2805. 10.1103/PhysRevB.13.3468
- T. Ando, Phys. Rev. B PLRBAQ 0556-2805 13, 3468 (1976). 10.1103/PhysRevB.13.3468
- (1976) Phys. Rev. B , vol.13 , pp. 3468
- Ando, T.¹

46
- 12344271673
- JUPSAU 0031-9015. 10.1143/JPSJ.12.570
- R. Kubo, J. Phys. Soc. Jpn. JUPSAU 0031-9015 12, 570 (1957). 10.1143/JPSJ.12.570
- (1957) J. Phys. Soc. Jpn. , vol.12 , pp. 570
- Kubo, R.¹

47
- 4644355301
- PPSOAU 0370-1328. 10.1088/0370-1328/71/4/306
- D. A. Greenwood, Proc. Phys. Soc. London PPSOAU 0370-1328 71, 585 (1958). 10.1088/0370-1328/71/4/306
- (1958) Proc. Phys. Soc. London , vol.71 , pp. 585
- Greenwood, D.A.¹

48
- 0000805232
- Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
- DOI 10.1063/1.1332424
- M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 89, 1232 (2001). 10.1063/1.1332424 (Pubitemid 33661880)
- (2001) Journal of Applied Physics , vol.89 , Issue.2 , pp. 1232-1250
- Fischetti, M.V.¹

49
- 77955225298
- JAPIAU 0021-8979. 10.1063/1.3437655
- J. Kim and M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 108, 013710 (2010). 10.1063/1.3437655
- (2010) J. Appl. Phys. , vol.108 , pp. 013710
- Kim, J.¹ Fischetti, M.V.²

50
- 0017553475
- c conduction-band ordering
- DOI 10.1063/1.323516
- M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, J. Appl. Phys. JAPIAU 0021-8979 48, 4587 (1977). 10.1063/1.323516 (Pubitemid 8557737)
- (1977) Journal of Applied Physics , vol.48 , Issue.11 , pp. 4587-4590
- Littlejohn, M.A.¹ Hauser, J.R.² Glisson, T.H.³

51
- 63249112379
- 16th Biennial, San Jose, CA
- A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H. -S. P. Wong, and K. Saraswat, in IEEE University/Government/Industry Microelectronics Symposium, 16th Biennial, San Jose, CA, 2006, pp. 47-50.
- (2006) IEEE University/Government/Industry Microelectronics Symposium , pp. 47-50
- Pethe, A.¹ Krishnamohan, T.² Kim, D.³ Oh, S.⁴ Wong, H.-S.P.⁵ Saraswat, K.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.