III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 146-148

  Chin, Hock Chun ^a   Gong, Xiao ^a   Wang, Lanxiang ^a   Lee, Hock Koon ^b   Shi, Luping ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

FinFET; high mobility; InGaAs; MOSFET; multiple gate field effect transistor (MuGFET); retrograde well

Indexed keywords

FINFET; HIGH MOBILITY; INGAAS; MOS-FET; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; RETROGRADE WELL;

DRAIN CURRENT; FINS (HEAT EXCHANGE); GALLIUM; INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING INDIUM;

FIELD EFFECT TRANSISTORS;

EID: 79151478661     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2091672     Document Type: Article

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