Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Yokoyama, M ^a   Iida, R ^a   Kim, S H ^a   Taoka, N ^a   Urabe, Y ^b   Yasuda, T ^b   Takagi, H ^b   Yamada, H ^c   Fukuhara, N ^c   Hata, M ^c   Sugiyama, M ^a   Nakano, Y ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; BURIED OXIDES; DIRECT WAFER BONDING; DOUBLE-GATE; MOS-FET; MOSFETS; N-CHANNEL; P-N JUNCTION; S-FACTOR; SI SUBSTRATES; THIN BODY; ULTRA-THIN;

ELECTRON DEVICES; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951840112     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703286     Document Type: Conference Paper

References (8)

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