Structural and electrical characteristics of Lu 2O 3 dielectric embedded MIM capacitors for analog IC applications

IEEE Transactions on Electron Devices

Volumn 59, Issue 6, 2012, Pages 1750-1756

  Mondal, Somnath ^a   Shih, Shao Ju ^b   Chen, Fa Hsyang ^a   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Lu 2O 3; metal insulator metal (MIM) capacitor; Ni; reliability; TaN

Indexed keywords

ANALOG IC; CONSTANT VOLTAGE STRESS; DEVICE RELIABILITY; ELECTRICAL CHARACTERISTIC; HIGH ELECTRIC FIELDS; HIGH-CAPACITANCE DENSITY; IC TECHNOLOGY; LEAKAGE CURRENT DENSITYS; METAL INSULATOR METAL CAPACITOR (MIM); MIM CAPACITORS; MIXED SIGNAL APPLICATIONS; POOLE-FRENKEL EFFECT; RADIO FREQUENCIES; SCHOTTKY EMISSIONS; TAN; VOLTAGE COEFFICIENT OF CAPACITANCES; VOLTAGE LINEARITY;

AMORPHOUS FILMS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; NICKEL; RELIABILITY; TANTALUM COMPOUNDS;

MIM DEVICES;

EID: 84861345419     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2189862     Document Type: Article

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