High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 940-942

  Ishikawa, Tsuyoshi ^a   Kodama, Daisuke ^a   Matsui, Yuichi ^a   Hiratani, Masahiko ^a   Furusawa, Takeshi ^a   Hisamoto, Digh ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MASKS; TANTALUM COMPOUNDS; THIN FILMS;

CAPACITANCE DENSITY;

MIM DEVICES;

EID: 0036923873     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. Miyashita et al., VLSI Symp. 2001, pp. 11-12