Characterizing voltage linearity and leakage current of high density Al2O3/HfO2/Al2/O3 MIM capacitors

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 384-386

  Lee, Sung Kyun ^a   Kim, Kwan Soo ^a   Kim, Soon Wook ^a   Lee, Dal Jin ^a   Park, Sang Jong ^a   Kim, Sibum ^a  

^a MagnaChip Semiconductor Ltd   (South Korea)

Author keywords

High metalinsulatormetal (MIM) capacitors; leakage current; thickness dependence; voltage coefficient of the capacitance (VCC)

Indexed keywords

CALCULATION METHODS; CURRENT CHARACTERISTIC; DIELECTRIC BREAKDOWNS; HIGH DENSITY; INSULATOR THICKNESS; INVERSE CUBE; MIM CAPACITORS; THICKNESS DEPENDENCE; THICKNESS RATIO; VOLTAGE COEFFICIENT; VOLTAGE LINEARITY;

ALUMINUM; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MIM DEVICES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79951945013     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2099200     Document Type: Article

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