Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 749-751

  Tsai, C Y ^a   Chiang, K C ^a   Lin, S H ^b   Hsu, K C ^b   Chi, C C ^b   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

High ; laser annealing; metal insulator metal (MIM); reliability; ZrO2

Indexed keywords

CAPACITANCE DENSITY; LASER ANNEALING; LOW-LEAKAGE CURRENT; METAL INSULATOR METALS; MIM CAPACITORS; PHASE FORMATIONS; TETRAGONAL PHASE; X-RAY DIFFRACTION MEASUREMENTS;

ANNEALING; CAPACITANCE; CAPACITORS; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; METALS; PHASE INTERFACES; RELIABILITY; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM NITRIDE; X RAY DIFFRACTION; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 77954142795     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049636     Document Type: Article

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