-
1
-
-
27144496148
-
Very high-density (23 fF/jUm2) RF MIM capacitors using high-TaTiO as the dielectric
-
Oct.
-
K. C. Chiang, C. H. Lai, A. Chin, T. J. Wang, H. F. Chiu, J.-R. Chen, S. P. McAlister, and C. C. Chi, "Very high-density (23 fF/jUm2) RF MIM capacitors using high-TaTiO as the dielectric," IEEE Electron Device Lett., vol.26, no.10, pp. 728-730, Oct. 2005.
-
(2005)
IEEE Electron Device Lett.
, vol.26
, Issue.10
, pp. 728-730
-
-
Chiang, K.C.1
Lai, C.H.2
Chin, A.3
Wang, T.J.4
Chiu, H.F.5
Chen, J.-R.6
McAlister, S.P.7
Chi, C.C.8
-
2
-
-
0003078805
-
-
3rd ed. Oxford, U.K.: Clarendon
-
J. C. Maxwell, A Treatise on Electricity and Magnetism, vol.2, 3rd ed. Oxford, U.K.: Clarendon, 1892, pp. 68-73.
-
(1892)
A Treatise on Electricity and Magnetism
, vol.2
, pp. 68-73
-
-
Maxwell, J.C.1
-
3
-
-
74449089006
-
Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
-
to be published
-
T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros-Jean, and S. Blonkowski, "Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors," Microelectron. Eng., 2010, to be published.
-
(2010)
Microelectron. Eng.
-
-
Bertaud, T.1
Bermond, C.2
Lacrevaz, T.3
Vallée, C.4
Morand, Y.5
Fléchet, B.6
Farcy, A.7
Gros-Jean, M.8
Blonkowski, S.9
-
4
-
-
75749108340
-
-
International Technology Roadmap for Semiconductors
-
International Technology Roadmap for Semiconductors.
-
-
-
-
5
-
-
35548945757
-
Nonlinear capacitance variations in amorphous oxide MIM structures
-
Oct.
-
S. Blonkowski, "Nonlinear capacitance variations in amorphous oxide MIM structures," Appl. Phys. Lett., vol.91, no.17, p. 172903, Oct. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, Issue.17
, pp. 172903
-
-
Blonkowski, S.1
-
6
-
-
31944442924
-
Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides
-
Jan.
-
S. Bécu, S. Crémer, and J.-L. Autran, "Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides," Appl. Phys. Lett., vol.88, no.5, p. 052902, Jan. 2006.
-
(2006)
Appl. Phys. Lett.
, vol.88
, Issue.5
, pp. 052902
-
-
Bécu, S.1
Crémer, S.2
Autran, J.-L.3
-
7
-
-
44649155667
-
Microscopic model for the nonlinear behavior of high-fc MIM capacitors
-
May
-
C. Wenger, G. Lupina, M. Lukosius, O. Seifarth, H.-J. Müssig, S. Pasko, and C. Lohe, "Microscopic model for the nonlinear behavior of high-fc MIM capacitors," J. Appl. Phys., vol.103, no.10, p. 104 103, May 2008.
-
(2008)
J. Appl. Phys.
, vol.103
, Issue.10
, pp. 104-103
-
-
Wenger, C.1
Lupina, G.2
Lukosius, M.3
Seifarth, O.4
Müssig, H.-J.5
Pasko, S.6
Lohe, C.7
-
8
-
-
0035424175
-
5 films
-
Aug.
-
5 films," J. Appl. Phys., vol.90, no.3, pp. 1501-1508, Aug. 2001.
-
(2001)
J. Appl. Phys.
, vol.90
, Issue.3
, pp. 1501-1508
-
-
Blonkowski, S.1
Regache, M.2
Halimaoui, A.3
-
9
-
-
34047246671
-
Modeling of nonlinearities in the capacitance-voltage characteristics of high-fc metal-insulator-metal capacitors
-
Apr.
-
P. Gonon and C. Vallée, "Modeling of nonlinearities in the capacitance-voltage characteristics of high-fc metal-insulator-metal capacitors," Appl. Phys. Lett., vol.90, no.14, p. 142906, Apr. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.14
, pp. 142906
-
-
Gonon, P.1
Vallée, C.2
-
10
-
-
0842309718
-
Voltage and temperature dependence of capacitance of high-fc HfO2 MIM capacitors: A unified understanding and prediction
-
C. Zhu, H. Hu, X. Yu, S. J. Kim, A. Chin, M. F. Li, B. J. Cho, and D. L. Kwong, "Voltage and temperature dependence of capacitance of high-fc HfO2 MIM capacitors: A unified understanding and prediction," in IEDM Tech. Dig., 2003, pp. 36.5.1-36.5.4.
-
(2003)
In IEDM Tech. Dig.
, pp. 3651-3654
-
-
Zhu, C.1
Hu, H.2
Yu, X.3
Kim, S.J.4
Chin, A.5
Li, M.F.6
Cho, B.J.7
Kwong, D.L.8
-
11
-
-
0032690319
-
Dielectric relaxation in solids
-
Jul.
-
A. K. Jonscher, "Dielectric relaxation in solids," J. Phys. D, Appl. Phys., vol.32, no.14, pp. R57-R70, Jul. 1999.
-
(1999)
J. Phys. D, Appl. Phys.
, vol.32
, Issue.14
-
-
Jonscher, A.K.1
-
13
-
-
35549008485
-
Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high k metal insulator metal capacitors
-
Oct.
-
F. El Kamel, P. Gonon, and C. Vallée, "Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high k metal insulator metal capacitors," Appl. Phys. Lett., vol.91, no.17, p. 172909, Oct. 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, Issue.17
, pp. 172909
-
-
El Kamel, F.1
Gonon, P.2
Vallée, C.3
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