Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 538-540

  Kim, Sun Jung ^a   Cho, Byung Jin ^a   Li, Ming Fu ^a,b   Ding, Shi Jin ^a,b   Zhu, Chunxiang ^a   Yu, Ming Bin ^b   Narayanan, Babu ^b   Chin, Albert ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS;

ANALOG IC; CAPACITANCE DENSITY; METAL INSULATOR METAL CAPACITORS; MIXED SIGNAL IC; VOLTAGE LINEARITY;

MIM DEVICES;

EID: 3943060190     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.832785     Document Type: Article

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