High-performance MIM capacitors using HfLaO-based dielectrics

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 17-19

  Zhang, Lu ^a   He, Wei ^a   Chan, Daniel S H ^a   Cho, Byung Jin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Hafnium oxide; High dielectric; Lanthanum oxide; Metal'insulator'metal (MIM); Multilayer dielectric structure

Indexed keywords

CAPACITANCE DENSITY; DIELECTRIC CONSTANTS; HAFNIUM OXIDE; HAFNIUM OXIDES; HIGH-CAPACITANCE DENSITY; LANTHANUM OXIDE; LOWER AVERAGE; MIM CAPACITORS; MULTILAYER DIELECTRIC STACK; MULTILAYER DIELECTRICS; ROBUST RELIABILITY; SINGLE LAYER; VOLTAGE LINEARITY;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM ALLOYS; LINEARIZATION; METALS; MIM DEVICES; MULTILAYER FILMS; MULTILAYERS; OXIDES;

LANTHANUM;

EID: 72949107368     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034545     Document Type: Article

References (16)

1. C. H. Ng, C. S. Ho, S. F. S. Chu, and S. C. Sun, "MIM capacitor integration for mixed-signal/RF applications," IEEE Trans. Electron Devices, vol.52, no.7, pp. 1390-1409, Jul. 2005.
2. D. Brassard, L. Ouellet, and M. A. El Khakani, "Room-temperature deposited titanium silicate thin films for MIM capacitor application," IEEE Electron Device Lett., vol.28, no.4, pp. 261-263, Apr. 2007.
3. S. J. Kim, B. J. Cho, M. F. Li, C. X. Zhu, A. Chin, and D.-L. Kwong, "Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors," IEEE Electron Device Lett., vol.24, no.7, pp. 442-444, Jul. 2003.
4. S. J. Kim, B. J. Cho, M. F. Li, S.-J. Ding, M. B. Yu, C. X. Zhu, A. Chin, and D.-L. Kwong, "Engineering of voltage nonlinearity in high-/c MIM capacitor for analog/mixed-signal ICs," in VLSI Symp. Tech. Dig., 2004, pp. 218-219.
5. S. Govindarajan, T. S. Böscke, P. Sivasubramani, P. D. Kirsch, B. H. Lee, H.-H. Tseng, R. Jammy, U. Schröder, S. Ramanathan, and B. E. Gnade, "Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices," Appl. Phys. Lett., vol.91, no.6, p. 062906, Aug. 2007.
6. W. He, L. Zhang, D. S. H. Chan, and B. J. Cho, "Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant," IEEE Electron Device Lett., vol.30, no.6, pp. 623-625, Jun. 2009.
7. W. He, D. S. H. Chan, S. J. Kim, Y. S. Kim, S. T. Kim, and B. J. Cho, "Process and material properties of HfLaOx prepared by atomic layer deposition," J. Electrochem. Soc, vol.155, no.10, pp. G189-G193, Aug. 2008.
8. C. Adelmann, V. Sriramkumar, S. Van Elshocht, P. Lehnen, T. Conard, and S. De Gendt, "Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films," Appl. Phys. Lett., vol.91, no.16, p. 162902, Oct. 2007.
9. K. Tomida, K. Kita, and A. Toriumi, "Dielectric constant enhancement due to Si incorporation into HfO2," Appl. Phy. Lett., vol.89, no.14, p. 142902, Oct. 2006.
10. K. Kita, K. Kyuno, and A. Toriumi, "Permittivity increase of yttrium-doped HfO2 through structural phase transformation," Appl. Phy. Lett., vol.86, no.10, p. 102906, Mar. 2005.
11. J. M. Park, M. W. Song, W. H. Kim, P. K. Park, Y. K. Jung, J. Y. Kim, S. J. Won, J. H. Lee, N. I. Lee, and H. K. Kang, "Mass production worthy MIM capacitor on gate polysilicon (MIM-COG) structure using dielectric for analog/RF/mixed signal application," in IEDM Tech. Dig., 2007, pp. 936-993.
12. X. B. Lu, Z. G. Liu, X. Zhang, R. Huang, H. W. Zhou, W. P. Wang, and N. Bich-Yen, "Investigation of high-quality ultra-thin LaAlO3 films as high-/c gate dielectrics," J. Appl. Phys., vol.36, no.23, pp. 3047-3507, Dec. 2003.
13. W. He, D. S. H. Chan, and B. J. Cho, "SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation," in Proc. 9th ICSICT, 2008, pp. 835-838.
14. 2) using ALD HfO2 dielectric," IEEE Electron Device Lett., vol.24, no.2, pp. 63-65, Feb. 2003.
15. S. J. Ding, H. Hu, F. Lim, S. J. Kim, X. F. Yu, C. X. Zhu, M. F. Li, B. J. Cho, D. S. H. Chan, S. C. Rustagi, M. B. Yu, A. Chin, and D.-L. Kwong, "High-performance MIM capacitor using ALD high-/c HfO2-Al2O3 laminate dielectrics," IEEE Electron Device Lett., vol.24, no.12, pp. 730-732, Dec. 2003.
16. S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu, "High-density MIM capacitors using Al2O3 and AlTiOx dielectrics," IEEE Electron Device Lett., vol.23, no.4, pp. 185-187, Apr. 2002.