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Nanotechnology

Volumn 23, Issue 19, 2012, Pages

Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon

(4) Nguyen, Hieu Pham Trung a Djavid, Mehrdad a Cui, Kai a Mi, Zetian a

a MCGILL UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; AUGER RECOMBINATION; CARRIER RECOMBINATION; ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; EMISSION CHARACTERISTICS; FOUR-ORDER; INGAN/GAN; INJECTION CONDITIONS; NANO SCALE; NON-RADIATIVE LIFETIMES; NONRADIATIVE RECOMBINATION PROCESS; ROOM TEMPERATURE; SHOCKLEY-READ-HALL; SHOCKLEY-READ-HALL RECOMBINATIONS; SURFACE RECOMBINATION VELOCITIES; TEMPERATURE DEPENDENT; WHITE LIGHT EMISSION; WHITE LIGHT EMITTING DIODES; WIRE DIAMETER;

AUGERS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANOWIRES; PHOSPHORUS; WIRE;

LIGHT EMITTING DIODES;

EID: 84860322822 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/23/19/194012 Document Type: Article

Times cited : (80)

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