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Volumn 95, Issue 20, 2009, Pages

Direct measurement of auger recombination in In0.1 Ga 0.9 N/GaN quantum wells and its impact on the efficiency of In 0.1 Ga0.9 N/GaN multiple quantum well light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; DEVICE EFFICIENCY; DIRECT MEASUREMENT; EFFICIENCY CHARACTERISTIC; HIGH INJECTION; LARGE-SIGNAL MODULATION; MULTIPLE QUANTUM WELLS; QUANTUM WELL; ROOM TEMPERATURE;

EID: 70450252171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3266520     Document Type: Article
Times cited : (145)

References (15)
  • 2
    • 35648955103 scopus 로고    scopus 로고
    • Defect related issues in the current roll-off in InGaN based light emitting diodes
    • DOI 10.1063/1.2801704
    • B. Monemar and B. E. Sernelius, Appl. Phys. Lett. 0003-6951 91, 181103 (2007). 10.1063/1.2801704 (Pubitemid 350037159)
    • (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 181103
    • Monemar, B.1    Sernelius, B.E.2
  • 13
    • 34247357021 scopus 로고    scopus 로고
    • Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature
    • DOI 10.1063/1.2722041
    • N. F. Masś, A. R. Adams, and S. J. Sweeney, Appl. Phys. Lett. 0003-6951 90, 161113 (2007). 10.1063/1.2722041 (Pubitemid 46644779)
    • (2007) Applied Physics Letters , vol.90 , Issue.16 , pp. 161113
    • Masse, N.F.1    Adams, A.R.2    Sweeney, S.J.3
  • 14
    • 0003704458 scopus 로고    scopus 로고
    • in, edited by P. Hall, 2nd ed. (Prentice Hall, Englewood Cliffs, NJ).
    • P. Bhattacharya, in Semiconductor Optoelectronic Devices, edited by, P. Hall, 2nd ed. (Prentice Hall, Englewood Cliffs, NJ, 1996).
    • (1996) Semiconductor Optoelectronic Devices
    • Bhattacharya, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.