-
2
-
-
36849016286
-
Effect of dislocation density on efficiency droop in GaInNGaN light-emitting diodes
-
DOI 10.1063/1.2822442
-
M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys. Lett. 0003-6951 91, 231114 (2007). 10.1063/1.2822442 (Pubitemid 350234416)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.23
, pp. 231114
-
-
Schubert, M.F.1
Chhajed, S.2
Kim, J.K.3
Schubert, E.F.4
Koleske, D.D.5
Crawford, M.H.6
Lee, S.R.7
Fischer, A.J.8
Thaler, G.9
Banas, M.A.10
-
3
-
-
35648977539
-
Origin of efficiency droop in GaN-based light-emitting diodes
-
DOI 10.1063/1.2800290
-
M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 0003-6951 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.18
, pp. 183507
-
-
Kim, M.-H.1
Schubert, M.F.2
Dai, Q.3
Kim, J.K.4
Schubert, E.F.5
Piprek, J.6
Park, Y.7
-
4
-
-
37149027248
-
Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm2
-
DOI 10.1063/1.2807272
-
N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 243506 (2007). 10.1063/1.2807272 (Pubitemid 350262046)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.24
, pp. 243506
-
-
Gardner, N.F.1
Muller, G.O.2
Shen, Y.C.3
Chen, G.4
Watanabe, S.5
Gotz, W.6
Krames, M.R.7
-
5
-
-
59349105695
-
-
0003-6951,. 10.1063/1.3073860
-
M. Maier, K. Köhler, M. Kunzer, W. Pletschen, and J. Wagner, Appl. Phys. Lett. 0003-6951 94, 041103 (2009). 10.1063/1.3073860
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 041103
-
-
Maier, M.1
Köhler, K.2
Kunzer, M.3
Pletschen, W.4
Wagner, J.5
-
6
-
-
46649103454
-
-
0003-6951,. 10.1063/1.2953543
-
J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, Appl. Phys. Lett. 0003-6951 92, 261103 (2008). 10.1063/1.2953543
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 261103
-
-
Hader, J.1
Moloney, J.V.2
Pasenow, B.3
Koch, S.W.4
Sabathil, M.5
Linder, N.6
Lutgen, S.7
-
7
-
-
35148864428
-
Auger recombination in InGaN measured by photoluminescence
-
DOI 10.1063/1.2785135
-
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.14
, pp. 141101
-
-
Shen, Y.C.1
Mueller, G.O.2
Watanabe, S.3
Gardner, N.F.4
Munkholm, A.5
Krames, M.R.6
-
8
-
-
0019576239
-
METHOD FOR DETERMINING EFFECTIVE NONRADIATIVE LIFETIME NAD LEAKAGE LOSSES IN DOUBLE-HETEROSTRUCTURE LASERS.
-
DOI 10.1063/1.329845
-
C. van Opdorp and G. W. t Hooft, J. Appl. Phys. 0021-8979 52, 3827 (1981). 10.1063/1.329845 (Pubitemid 12430296)
-
(1981)
Journal of Applied Physics
, vol.52
, Issue.6
, pp. 3827-3839
-
-
Van Opdorp, C.1
T'Hooft, G.W.2
-
9
-
-
0029371335
-
-
0013-5194,. 10.1049/el:19951191
-
G. E. Shtengel, D. A. Ackerman, and P. A. Morton, Electron. Lett. 0013-5194 31, 1747 (1995). 10.1049/el:19951191
-
(1995)
Electron. Lett.
, vol.31
, pp. 1747
-
-
Shtengel, G.E.1
Ackerman, D.A.2
Morton, P.A.3
-
10
-
-
0006009502
-
Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes
-
DOI 10.1063/1.1413721
-
O. Pursiainen, N. Linder, A. Jaeger, R. Oberschmid, and K. Streubel, Appl. Phys. Lett. 0003-6951 79, 2895 (2001). 10.1063/1.1413721 (Pubitemid 33608091)
-
(2001)
Applied Physics Letters
, vol.79
, Issue.18
, pp. 2895-2897
-
-
Pursiainen, O.1
Linder, N.2
Jaeger, A.3
Oberschmid, R.4
Streubel, K.5
-
11
-
-
67049171363
-
-
0003-6951,. 10.1063/1.3133359
-
K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 0003-6951 94, 191109 (2009). 10.1063/1.3133359
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 191109
-
-
Delaney, K.T.1
Rinke, P.2
Van De Walle, C.G.3
|