Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1067-1069

  Sekiguchi, Hiroto ^a,b   Kato, Kei ^a   Tanaka, Jo ^a   Kikuchi, Akihiko ^a,b   Kishino, Katsumi ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITIONS; AL CONTENTS; DC OPERATIONS; EL PEAK WAVELENGTHS; HIGH AL CONTENTS; MOLECULAR-BEAM EPITAXIES; PEAK WAVELENGTHS; PULSED OPERATIONS; ROOM TEMPERATURES; SI SUBSTRATES; THERMAL RESISTANCES; ULTRA-VIOLET; ULTRAVIOLET EMISSIONS;

ALUMINUM; CRYSTAL GROWTH; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA DIAGNOSTICS; PLASMA DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUPERCONDUCTING MATERIALS;

GALLIUM ALLOYS;

EID: 54849418036     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778733     Document Type: Article

References (19)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006).
2. M. Shatalov, A. Chitnis, P. Yadav, Md. F. Hasan, J. Khan, V. Adivarahan, H. P. Maruska, W. H. Sun, and M. Asif Khan, Appl. Phys. Lett. 86, 201109 (2005).
3. K. Akita, T. Nakamura, and H. Hirayama, Jpn. J. Appl. Phys. 43, 8030 (2004).
4. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys. 36, L459 (1997).
5. M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Munoz, and R. Beresford, J. Cryst. Growth 183, 23 (1998).
6. E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, S. I. Molina, A. M. Sanchez, F. J. Pacheco, and R. Garcia, J. Cryst. Growth 201/202, 296 (1999).
7. H. Sekiguchi, T. Nakazato, A. Kikuchi, and K. Kishino, J. Cryst. Growth 300, 259 (2007).
8. M. Yoshizawa, A. Kikuchi, N. Fujita, K. Kushi, H. Sasamoto, and K. Kishino, J. Cryst. Growth 189/190, 23 (1998).
9. A. Kikuchi, K. Yamano, M. Tada, and K. Kishino, phys. stat. sol. (b) 241, 2754 (2004).
10. H.-J. Choi, J. C. Johnson, R. R. He, F. Kim, P. Pauzauskie, J. Goldberger, R. J. Saykally, and P. D. Yang, J. Phys. Chem. B 107, 8721 (2003).
11. H. M. Kim, T. W. Kang, and K. S. Chung, Adv. Mater. 15, 567 (2003).
12. Z. Zhong, F. Qian, D. Wang, and C. M. Lieber, Nano Lett. 3, 343 (2003).
13. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, Jpn. J. Appl. Phys. 43, L1524 (2004).
14. A. Kikuchi, M. Tada, K. Miwa and K. Kishino, Proc. SPIE 6129, 6129-05(2006).
15. K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, Proc. SPIE 6473, 64730T-1 (2007).
16. H.-M. Kim, Y.-H. Cho, H. Lee, S. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, Nano. Lett. 4, 1059 (2004).
17. J. Ristic, E. Calleja, A. Trampert, S. Fernandez-Garrido, C. Rivera, U. Jahn, and K. H. Ploog, Phys. Rev. B 94, 146102 (2005).
18. J.-S. Park, D. W. Fothergill, X. Zhang, Z. J. Reitmeier, J. F. Muth, and R. F. Davis, Jpn. J. Appl. Phys. 44, 7254 (2005).
19. V. Bougrov, E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, Properties of Advanced Semicondutor Materials GaN, AlN, InN, BN, SiC, SiGe (John Wiley and Sons, Inc., New York, 2001).