Ballistic transport in InGaN-based LEDs: Impact on efficiency

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Özgür, Ü ^a   Ni, X ^a   Li, X ^a   Lee, J ^a   Liu, S ^a   Okur, S ^a   Avrutin, V ^a   Matulionis, A ^b   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; AUGER RECOMBINATION; BALLISTIC TRANSPORTS; BARRIER HEIGHTS; EFFICIENCY DEGRADATION; ELECTRON BLOCKING LAYER; ELECTRON COOLING; ELECTRON INJECTORS; ELECTRON OVERFLOW; HIGH INJECTION; INGAN-BASED LED; INGAN/GAN; LED LIGHTING; M-PLANE; NON-UNIFORM DISTRIBUTION; OVERFLOW MODEL; RECOMBINATION PROCESS; SHOCKLEY-READ-HALL; TEMPERATURE SENSITIVITY;

AUGERS; BALLISTICS; DEGRADATION; HETEROJUNCTIONS; HOT ELECTRONS; LIGHT EMITTING DIODES; TRANSPORT PROPERTIES;

ELECTRONS;

EID: 79551717510     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014022     Document Type: Article

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