Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

IEEE Photonics Technology Letters

Volumn 15, Issue 10, 2003, Pages 1342-1344

  Tu, Ru Chin ^a   Tun, Chun Ju ^b   Pan, Shyi Ming ^a   Chuo, Chang Cheng ^a   Sheu, J K ^b   Tsai, Ching En ^a   Wang, Te Chung ^a   Chi, Gou Chung ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaN; Electron blocking (EB) layer; GaN; InGaN; Light emitting diodes (LEDs); Low temperature (LT)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON-BLOCKING LAYER; LOW TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 0141918549     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.818240     Document Type: Article

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