SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Solid State Communications

Volumn 137, Issue 5, 2006, Pages 257-259

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

(4) Lin, Yow Jon a Lin, Wen Xiang a Lee, Ching Ting b Chien, Feng Tso c

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c FENG CHIA UNIVERSITY (Taiwan)

Author keywords

A. Semiconductors; A. Surfaces and interfaces; D. Optical properties

Indexed keywords

ELECTRIC PROPERTIES; HALL EFFECT; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE;

NATIVE OXIDE; REPULSION; SURFACE PHOTOVOLTAGE SPECTROSCOPY; SURFACES AND INTERFACES;

GALLIUM NITRIDE;

EID: 30344449206 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2005.11.031 Document Type: Article

Times cited : (20)

References (23)

1
- 0003944184
- Gordon and Breach Science Publishers Amsterdam
- S.J. Pearton GaN and Related Materials 1997 Gordon and Breach Science Publishers Amsterdam
- (1997) GaN and Related Materials
- Pearton, S.J.¹

2
- 0012038640
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho Appl. Phys. Lett. 72 1998 2014
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2014
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

3
- 0004167140
- Springer Berlin
- H. Morkoç Nitride Semiconductors and Devices 1999 Springer Berlin
- (1999) Nitride Semiconductors and Devices
- Morkoç, H.¹

4
- 0000153566
- Y.J. Lin, and C.T. Lee Appl. Phys. Lett. 77 2000 3986
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3986
- Lin, Y.J.¹ Lee, C.T.²

5
- 0035886283
- C.T. Lee, Y.J. Lin, and D.S. Liu Appl. Phys. Lett. 79 2001 2573
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2573
- Lee, C.T.¹ Lin, Y.J.² Liu, D.S.³

6
- 0031167257
- L. Aigouy, F.H. Pollak, J. Petruzzello, and K. Shahzad Solid State Commun. 102 1997 877
- (1997) Solid State Commun. , vol.102 , pp. 877
- Aigouy, L.¹ Pollak, F.H.² Petruzzello, J.³ Shahzad, K.⁴

7
- 0035475857
- L. Kronik, and Y. Shapira Surf. Interface Anal. 31 2001 954
- (2001) Surf. Interface Anal. , vol.31 , pp. 954
- Kronik, L.¹ Shapira, Y.²

8
- 0000514978
- M. Leibovitch, L. Kronik, E. Fefer, and Y. Shapira Phys. Rev. B 50 1994 1739
- (1994) Phys. Rev. B , vol.50 , pp. 1739
- Leibovitch, M.¹ Kronik, L.² Fefer, E.³ Shapira, Y.⁴

9
- 0000740718
- Y. Rosenwaks, L. Burstein, Y. Shapira, and D. Huppert Appl. Phys. Lett. 57 1990 458
- (1990) Appl. Phys. Lett. , vol.57 , pp. 458
- Rosenwaks, Y.¹ Burstein, L.² Shapira, Y.³ Huppert, D.⁴

10
- 0038324355
- Y.J. Lin, C.S. Lee, and C.T. Lee J. Appl. Phys. 93 2003 5321
- (2003) J. Appl. Phys. , vol.93 , pp. 5321
- Lin, Y.J.¹ Lee, C.S.² Lee, C.T.³

11
- 30344455819
- J.M. Hwang, J.T. Hsieh, H.L. Hwang, and W.H. Hung MRS Internet J. Nitride Semicond. Res. 5S1 2000 W1173
- (2000) MRS Internet J. Nitride Semicond. Res. , vol.51
- Hwang, J.M.¹ Hsieh, J.T.² Hwang, H.L.³ Hung, W.H.⁴

12
- 0037164896
- M.A. Reshchikov, H. Morkoç, S.S. Park, and K.Y. Lee Appl. Phys. Lett. 81 2002 4970
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4970
- Reshchikov, M.A.¹ Morkoç, H.² Park, S.S.³ Lee, K.Y.⁴

13
- 0038657959
- J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, and J.Y. Han Appl. Phys. Lett. 82 2003 3433
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3433
- Oila, J.¹ Kivioja, J.² Ranki, V.³ Saarinen, K.⁴ Look, D.C.⁵ Molnar, R.J.⁶ Park, S.S.⁷ Lee, S.K.⁸ Han, J.Y.⁹

14
- 0000630729
- I. Shalish, Y. Shapira, L. Burstein, and J. Salzman J. Appl. Phys. 89 2001 390
- (2001) J. Appl. Phys. , vol.89 , pp. 390
- Shalish, I.¹ Shapira, Y.² Burstein, L.³ Salzman, J.⁴

15
- 0001126465
- L.W. Tu, W.C. Kuo, K.H. Lee, P.H. Tsao, C.M. Lai, A.K. Chu, and J.K. Shen Appl. Phys. Lett. 77 2000 3788
- (2000) Appl. Phys. Lett. , vol.77 , pp. 3788
- Tu, L.W.¹ Kuo, W.C.² Lee, K.H.³ Tsao, P.H.⁴ Lai, C.M.⁵ Chu, A.K.⁶ Shen, J.K.⁷

16
- 0001702478
- L.W. Tu, E.F. Schubert, M. Hong, and G.J. Zydzik J. Appl. Phys. 80 1996 6448
- (1996) J. Appl. Phys. , vol.80 , pp. 6448
- Tu, L.W.¹ Schubert, E.F.² Hong, M.³ Zydzik, G.J.⁴

17
- 0039263445
- J.F. Kauffman, and G.L. Richmond J. Appl. Phys. 73 1993 1912
- (1993) J. Appl. Phys. , vol.73 , pp. 1912
- Kauffman, J.F.¹ Richmond, G.L.²

18
- 0003809785
- Academic New York
- J.I. Pankove, and T.D. Moustakas Gallium Nitride (GaN) II 1999 Academic New York
- (1999) Gallium Nitride (GaN) II
- Pankove, J.I.¹ Moustakas, T.D.²

19
- 0001215560
- W. Mönch J. Vac. Sci. Technol. B 4 1986 1085
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 1085
- Mönch, W.¹

20
- 0010675947
- C. Tejedor, F. Flores, and E. Louis J. Phys., Part C: Solid State Phys 10 1977 2163
- (1977) J. Phys., Part C: Solid State Phys , vol.10 , pp. 2163
- Tejedor, C.¹ Flores, F.² Louis, E.³

21
- 0020766567
- S. Ray, R. Banerjee, N. Basu, A.K. Batabyal, and A.K. Barua J. Appl. Phys. 54 1983 3497
- (1983) J. Appl. Phys. , vol.54 , pp. 3497
- Ray, S.¹ Banerjee, R.² Basu, N.³ Batabyal, A.K.⁴ Barua, A.K.⁵

22
- 0032606580
- H. Kim, A. Piqué, J.S. Horwitz, H. Mattoussi, H. Murata, Z.H. Kafafi, and D.B. Chrisey Appl. Phys. Lett. 74 1999 3444
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3444
- Kim, H.¹ Piqué, A.² Horwitz, J.S.³ Mattoussi, H.⁴ Murata, H.⁵ Kafafi, Z.H.⁶ Chrisey, D.B.⁷

23
- 0036640189
- C.Y. Lo, C.L. Hsu, Q.X. Yu, H.Y. Lee, and C.T. Lee J. Appl. Phys. 92 2002 274
- (2002) J. Appl. Phys. , vol.92 , pp. 274
- Lo, C.Y.¹ Hsu, C.L.² Yu, Q.X.³ Lee, H.Y.⁴ Lee, C.T.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.