SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(7) Meyaard, David S a Shan, Qifeng a Dai, Qi a Cho, Jaehee a Schubert, E Fred a Kim, Min Ho b Sone, Cheolsoo b

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CURRENT CURVE; ELECTRON LEAKAGE; GAN-BASED LIGHT-EMITTING DIODES; HIGH CURRENT DENSITIES; HIGH TEMPERATURE; LIGHT OUTPUT; LOW CURRENT DENSITY; SHOCKLEY-READ-HALL RECOMBINATIONS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE INCREASE;

CURRENT DENSITY; GALLIUM NITRIDE; LIGHT EMISSION;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79961062445 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3618673 Document Type: Article

Times cited : (83)

References (14)

1
- 35648977539
- Origin of efficiency droop in GaN-based light-emitting diodes
- DOI 10.1063/1.2800290
- M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290 (Pubitemid 350037243)
- (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183507
- Kim, M.-H.¹ Schubert, M.F.² Dai, Q.³ Kim, J.K.⁴ Schubert, E.F.⁵ Piprek, J.⁶ Park, Y.⁷

2
- 52949131872
- 10.1063/1.2988324
- J. Xie, X. Ni, Q. Fan, R. Shimada, U. Üzgür, and H. Morkoc, Appl. Phys. Lett. 93, 121107 (2008). 10.1063/1.2988324
- (2008) Appl. Phys. Lett. , vol.93 , pp. 121107
- Xie, J.¹ Ni, X.² Fan, Q.³ Shimada, R.⁴ Üzgür, U.⁵ Morkoc, H.⁶

3
- 60349114909
- 10.1063/1.3081059
- K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 94, 061116 (2009). 10.1063/1.3081059
- (2009) Appl. Phys. Lett. , vol.94 , pp. 061116
- Vampola, K.J.¹ Iza, M.² Keller, S.³ Denbaars, S.P.⁴ Nakamura, S.⁵

4
- 79951772113
- 10.1007/s11082-011-9437-z
- J. Piprek and S. Li, Opt. Quantum Electron. 42, 89 (2010). 10.1007/s11082-011-9437-z
- (2010) Opt. Quantum Electron. , vol.42 , pp. 89
- Piprek, J.¹ Li, S.²

5
- 77949745836
- 10.1063/1.3330870
- A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010). 10.1063/1.3330870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 103504
- David, A.¹ Grundmann, M.J.²

6
- 70450252171
- 10.1063/1.3266520
- M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, Appl. Phys. Lett. 95, 201108 (2009). 10.1063/1.3266520
- (2009) Appl. Phys. Lett. , vol.95 , pp. 201108
- Zhang, M.¹ Bhattacharya, P.² Singh, J.³ Hinckley, J.⁴

7
- 79251580266
- 10.1063/1.3544584
- Q. Dai, Q. Shan, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, Appl. Phys. Lett. 98, 033506 (2011). 10.1063/1.3544584
- (2011) Appl. Phys. Lett. , vol.98 , pp. 033506
- Dai, Q.¹ Shan, Q.² Cho, J.³ Schubert, E.F.⁴ Crawford, M.H.⁵ Koleske, D.D.⁶ Kim, M.-H.⁷ Park, Y.⁸

8
- 77957660712
- 10.1063/1.3493654
- Q. Dai, Q. Shan, J. Wang, S. Chhajed, J. Cho, E. F. Schubert, M. H. Crawford, D. D. Koleske, M.-H. Kim, and Y. Park, Appl. Phys. Lett. 97, 133507 (2010). 10.1063/1.3493654
- (2010) Appl. Phys. Lett. , vol.97 , pp. 133507
- Dai, Q.¹ Shan, Q.² Wang, J.³ Chhajed, S.⁴ Cho, J.⁵ Schubert, E.F.⁶ Crawford, M.H.⁷ Koleske, D.D.⁸ Kim, M.-H.⁹ Park, Y.¹⁰

9
- 38949146387
- Carrier distribution in (0001) InGaNGaN multiple quantum well light-emitting diodes
- DOI 10.1063/1.2839305
- A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305 (Pubitemid 351230052)
- (2008) Applied Physics Letters , vol.92 , Issue.5 , pp. 053502
- David, A.¹ Grundmann, M.J.² Kaeding, J.F.³ Gardner, N.F.⁴ Mihopoulos, T.G.⁵ Krames, M.R.⁶

10
- 0042099114
- 2nd ed. (Cambridge University Press, Cambridge).
- E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
- (2006) Light-Emitting Diodes
- Schubert, E.F.¹

11
- 0023451822
- 10.1007/BF00692316
- A. Haug, Appl. Phys. B, 44, 151 (1987). 10.1007/BF00692316
- (1987) Appl. Phys. B , vol.44 , pp. 151
- Haug, A.¹

12
- 38349143964
- 10.1109/JQE.2007.910938
- J. Hader, J. V. Moloney, and S. W. Koch, IEEE J. Quantum Electron. 44, 185 (2008). 10.1109/JQE.2007.910938
- (2008) IEEE J. Quantum Electron. , vol.44 , pp. 185
- Hader, J.¹ Moloney, J.V.² Koch, S.W.³

13
- 35148864428
- Auger recombination in InGaN measured by photoluminescence
- DOI 10.1063/1.2785135
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135 (Pubitemid 47534188)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 141101
- Shen, Y.C.¹ Mueller, G.O.² Watanabe, S.³ Gardner, N.F.⁴ Munkholm, A.⁵ Krames, M.R.⁶

14
- 73349142666
- 10.1109/TED.2009.2035538
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans. Electron Devices 57, 79 (2010). 10.1109/TED.2009.2035538
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 79
- Laubsch, A.¹ Sabathil, M.² Baur, J.³ Peter, M.⁴ Hahn, B.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.