Improved resistive switching uniformity in Cu/HfO2Pt devices by using current sweeping mode

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1053-1055

  Lian, Wentai ^a,b   Lv, Hangbing ^a   Liu, Qi ^a,b   Long, Shibing ^a   Wang, Wei ^a   Wang, Yan ^a   Li, Yingtao ^a   Zhang, Sen ^a   Dai, Yuehua ^b   Chen, Junning ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

Author keywords

Conductive filament (CF); resistive random access memory (ReRAM); resistive switching; uniformity

Indexed keywords

CONDUCTIVE FILAMENT (CF); CONDUCTIVE FILAMENTS; EFFICIENT METHOD; MEASUREMENT RESULTS; MEMORY CELL; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; RESISTIVE SWITCHING; SWITCHING PROPERTIES; UNIFORM DISTRIBUTION; UNIFORMITY;

FEEDBACK; SWITCHING SYSTEMS;

PLATINUM;

EID: 79960906294     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157990     Document Type: Article

References (15)

1. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
2. M. Kund, G. Beitel, C.-U. Pinnow, T. Röhr, J. Schumann, R. Symanczyk, K.-D. Ufert, and G. Müller, "Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm," in IEDM Tech. Dig., 2005, pp. 754-757. (Pubitemid 46370960)
3. H. B. Lv, H. J. Wan, and T. A. Tang, "Improvement of resistive switching uniformity by introducing a thin GST interface layer," IEEE Electron Device Lett., vol. 31, no. 9, pp. 978-980, Aug. 2010.
4. D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Improvement of resistive memory switching in NiO using IrO2," Appl. Phys. Lett., vol. 88, no. 23, p. 232 106, Jun. 2006.
5. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in IEDM Tech. Dig., 2009, pp. 1-4.
6. C. Nauenheim, C. Kuegeler, A. Ruediger, and R. Waser, "Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions," Appl. Phys. Lett., vol. 96, no. 12, p. 122 902, Mar. 2010.
7. B. Gao, X. Y. Chang, B. Sun, H. W. Zhang, L. F. Liu, X. Y. Liu, R. Q. Han, T. B. Wu, and J. F. Kang, "Identification and application of current compliance failure phenomenon in RRAM device," in Proc. VLSI-TSA, Jun. 2010, pp. 144-145.
8. U. Russo, C. Cagli, S. Spiga, E. Cianci, and D. Ielmini, "Impact of electrode materials on resistive-switching memory programming," IEEE Electron Device Lett., vol. 30, no. 8, pp. 817-819, Aug. 2009.
9. Y. Wang, Q. Liu, S. Long, W. Wang, Q. Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, and M. Liu, "Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications," Nanotechnology, vol. 21, no. 4, p. 045 202, Jan. 2010.
10. J. Park, M. Jo, J. Lee, S. Jung, S. Kim, W. Lee, J. Shin, and H. Hwang, "Improved switching uniformity and speed in filament-type RRAM using lightning rod effect," IEEE Electron Device Lett., vol. 32, no. 1, pp. 63-65, Jan. 2011.
11. Q. Liu, C. M. Dou, Y. Wang, S. B. Long, W. Wang, M. Liu, M. H. Zhang, and J. N. Chen, "Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device," Appl. Phys. Lett., vol. 95, no. 2, p. 023 501, Jul. 2009.
12. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistiveswitching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
13. W. Wang, S. Fujita, and S. S. Wong, "Reset mechanism of TiOx resistance-change memory device," IEEE Electron Device Lett., vol. 30, no. 7, pp. 733-735, Jul. 2009.
14. W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, "On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt," Appl. Phys. Lett., vol. 93, no. 22, p. 223 506, Dec. 2008.
15. M. Terai, Y. Sakotsubo, S. Kotsuji, and H. Hada, "Resistance controllability of Ta2O5/TiO2 stack ReRAM for low-voltage and multilevel operation," IEEE Electron Device Lett., vol. 31, no. 3, pp. 204-206, Mar. 2010.