Resistive switching and changes in microstructure

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 300-316

  Schroeder, Herbert ^a   Pandian, Ramanathaswamy ^a,b   Miao, Jun ^a,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

electron microscopy (EM); microstructure; ReRAM; resistive switching (RS)

Indexed keywords

ELECTRIC MEASUREMENTS; EX SITU; HEAVY DAMAGE; IN-SITU; MEMORY DEVICE; MICROSTRUCTURE CHANGES; MICROSTRUCTURE CHARACTERIZATION; RERAM; RESISTANCE CHANGE; RESISTIVE SWITCHING; THIN FILM MICROSTRUCTURES; ULTRA-HIGH;

DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; PLATINUM; SWITCHING; SWITCHING SYSTEMS; THIN FILM CIRCUITS; THIN FILMS;

MICROSTRUCTURE;

EID: 79751505903     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026743     Document Type: Article

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