The atomic switch

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2228-2236

  Aono, Masakazu ^a   Hasegawa, Tsuyoshi ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic switch; electrochemical devices; nanoionics devices; nonvolatile memories; three terminal switch; two terminal switch

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONDUCTIVE MATERIALS; ELECTROCHEMICAL DEVICES; ELECTRODES; METAL IONS; METALLIC COMPOUNDS; METALLIZING; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

ATOMIC SWITCHES; NANOIONICS; NON-VOLATILE MEMORY; THREE TERMINAL SWITCHES; TWO-TERMINAL SWITCHES;

ATOMS;

EID: 78649934902     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2061830     Document Type: Conference Paper

References (67)

1. International Technology Roadmap for Semiconductors, 2009 edition. [Online]. Available: http://www.itrs.net/Links/2009ITRS/Home2009.htm.
2. H. Akinaga and H. Shima, "Resistive random access memory (ReRAM): A metal oxide memory cell," Proc. IEEE, to be published.
3. F. Argall, "Switching phenomena in titanium oxide thin films," Solid-State Electron., vol. 11, pp. 535-541, 1968.
4. J. F. Gibbons and W. E. Beadle, "Switching properties of thin NiO films," Solid-State Electron., vol. 7, pp. 785-797, 1964.
5. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Mater., vol. 6, pp. 833-840, 2007.
6. 2 thin films grown by atomic-layer deposition," J. Appl. Phys., vol. 98, 033715, 2005.
7. 5 resistive switch," Appl. Phys. Lett., vol. 91, 092110, 2007.
8. L. Ercker, Treaties on Ores and Assaying, 1574 (translated by Sisco A. G. and Smith C. S., Univ. Chicago, pp. 177, 1951).
9. 3 films," J. Appl. Phys., vol. 47, pp. 2767-2772, 1976.
10. H. Ikeda and K. Tada, "Sanyo's couliodes and memoriodes," in Applications of Solid Electrolytes, T. Takahashi and A. Kozaw, Eds. Cleveland, OH: Academic, 1980, pp. 40-45.
11. 0:40/Ag system prepared by photodissolution of Ag," J. Electrochem. Soc., vol. 145, pp. 2971-2974, 1998.
12. D. M. Eigler, C. P. Lutz, and W. E. Rudge, "An atomic switch realized with the scanning tunnelling microscope," Nature, vol. 352, pp. 600-603, 1991.
13. J. I. Pascual, J. Mendez, J. Gomez-Herrero, A. M. Baro, N. Garcia, and V. T. Binh, "Quantum contact in gold nanostructures by scanning tunneling microscopy," Phys. Rev. Lett., vol. 71, pp. 1852-1855, 1993.
14. D. P. E. Smith, "Quantum point contact switches," Science, vol. 269, pp. 371-373, 1995.
15. K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, "Quantum point contact switch realized by solid electrochemical reaction," Riken Rev., vol. 37, pp. 7-8, 2001.
16. K. Terabe, T. Nakayama, T. Hasegawa, and M. Aono, "Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction," J. Appl. Phys., vol. 91, pp. 10 110-10 114, 2002.
17. K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, "Quantized conductance atomic switch," Nature, vol. 433, pp. 47-50, 2005.
18. T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, and M. Aono, "Switching property of atomic switch controlled by solid electrochemical reaction," Jpn. J. Appl. Phys., vol. 45, pp. L364-L366, 2006.
19. T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, and M. Aono, "Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide," J. Phys., Conf. Ser., vol. 61, pp. 1157-1161, 2007.
20. M. Wuttig and N. Yamada, "Phase-change materials for rewriteable data storage," Nature Mater., vol. 6, pp. 824-832, 2007.
21. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. S. Shenoy, "Phase change memory technology," J. Vac. Sci. Technol. B, vol. 28, pp. 223-262, 2010.
22. Emerging research devices in International Technology Roadmap for Semiconductors 2009 edition. [Online]. Available: http://www.itrs.net/Links/ 2009ITRS/Home2009.htm.
23. T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, "Forming and switching mechanisms of a cation-migration-based oxide resistive memory," submitted to Nanotechnology.
24. M. Kundu, K. Terabe, T. Hasegawa, and M. Aono, "Effect of sulfurization conditions and post deposition annealing treatment on the structural and electrical properties of silver sulfide films," J. Appl. Phys., vol. 99, pp. 103501-1-103501-9, 2006.
25. M. Kundu, T. Hasegawa, K. Terabe, and M. Aono, "Effect of sulfurization condition on structural and electrical properties of copper sulfide films," J. Appl. Phys., vol. 103, pp. 073523-1-073523-7, 2008.
26. R. Soni, P. Meuffels, A. Petraru, M. Weides, C. Kugeler, R. Waser, and H. Kohlstedt, "Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise," J. Appl. Phys., vol. 107, pp. 042517-1-042517-10, 2010.
27. M. Haemori, T. Nagata, and T. Chikyow, "Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion," Appl. Phys. Exp., vol. 2, pp. 061401-1-061401-3, 2009.
28. 2 cells," Appl. Phys. Lett., vol. 92, pp. 122910-1-122910-3, 2008.
29. 2 films," Appl. Phys. Lett., vol. 90, pp. 113501-1-113501-3, 2007.
30. A. Chen, S. Haddad, Y. Wu, T. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. van Buskirk, and M. Taguchi, "Non-volatile resistive switching for advanced memory applications," in Tech. Dig. Int. Electron Devices Meeting, 2005, pp. 765-768.
31. K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima, T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada, and H. Narisawa, "A novel resistance memory with high scalability and nanosecond," in Tech. Dig. Int. Electron Devices Meeting, 2007, pp. 783-786.
32. 2:Cu/Pt device," Appl. Phys. Lett., vol. 95, 023501, 2009.
33. Y. C. Yang, F. Pan, Q. Liu, F. Zeng, Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett. 9 1636-1643 2009.
34. M. N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, "A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte," IEEE Trans. Nanotechnol., vol. 5, no. 5, pp. 535-544, Sep. 2006.
35. N. Banno, T. Sakamoto, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa, and M. Aono, "Solid-electrolyte nanometer switch," IEICE Trans. Electron., vol. 11, pp. 1492-1498, 2006.
36. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "Missing memristor found," Nature, vol. 453, pp. 80-83, 2008.
37. T. Hino, H. Tanaka, T. Hasegawa, Y. Miyake, M. Aono, and T. Ogawa, "Fabrication and measurement of photo-responsive atomic switch," in Proc. 10th Int. Conf. Atomically Controlled Surfaces Interfaces Nanostructures, 2009, p. 158.
38. T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J. K. Gimzewski, and M. Aono, "Learning abilities achieved by a single solid-state atomic switch," Adv. Mater., vol. 22, pp. 1831-1834, 2010.
39. 2S atomic switch," J. Phys. Chem. Lett., vol. 1, pp. 604-608, 2010.
40. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanism, prospects, and challenges," Adv. Mater., vol. 21, pp. 2632-2663, 2009.
41. S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, and M. Aono, "A nonvolatile programmable solid-electrolyte nanometer switch," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 168-176, 2005.
42. N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, and M. Aono, "Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch," IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3283-3287, Nov. 2008.
43. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, "Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3V," in Tech. Dig. IEEE Int. Electron Device Meeting, 2007, pp. 767-770.
44. M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid-state electrolytes," IEEE Trans. Nanotechnol., vol. 4, no. 3, pp. 331-338, May 2005.
45. N. Banno, T. Sakamoto, S. Fujieda, and M. Aono, "On-state reliability of solid-electrolyte switch," in Proc. Int. Reliability Phys. Symp., Phoenix, AZ, 2008, pp. 707-708.
46. M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saito, Y. Yabe, S. Ishida, M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, and N. Kasai, "Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic," in Tech. Dig. Int. Electron Devices Meeting, 2009, pp. 1-4.
47. C. Liang, K. Terabe, T. Tsuruoka, M. Osada, T. Hasegawa, and M. Aono, "Agl/Ag heterojunction nanowire: Facile electrochemical synthesis, photoluminescence, and enhanced ionic conductivity," Adv. Func. Mater., vol. 17, pp. 1466-1472, 2007.
48. 2S/Ag nanowire heterostructure," Nanotechnology, vol. 18, pp. 485202-1-485202-5, 2007.
49. 3," Nature Mater., vol. 5, pp. 312-320, 2006.
50. L. O. Chua, "MemristorVMissing circuit element," IEEE Trans. Circuit Theory, vol. CT-18, pp. 507-519, Sep. 1971.
51. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nature Nanotechnol., vol. 3, pp. 429-433, 2008.
52. J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "FMemristive- switches enable Fstateful- logic operations via material implication," Nature, vol. 464, pp. 873-876, 2010.
53. C. Mead, "Neuromorphic electronic systems," Proc. IEEE, vol. 78, no. 10, pp. 1629-1636, Oct. 1990.
54. T. Hanyu, S. Aragaki, and T. Higuchi, "Functionally separated, multiple-valued content-addressable memory and its applications," Inst. Electr. Eng. Proc.VCircuits Devices Syst., vol. 142, no. 3, pp. 165-172, 1995.
55. 3Pt memory cells," Electrochem. Solid-State Lett., vol. 13, pp. H87-H89, 2010.
56. 0:6 solid electrolyte," Electrochem. Solid-State Lett., vol. 13, pp. H159-H162, 2010.
57. 2Ag structure for low-voltage nonvolatile memory applications," IEEE Electron Device Lett., vol. 31, no. 2, pp. 117-119, Feb. 2010.
58. D. Cha, S. Lee, J. Jung, I. An, and D.-W. Kim, "Bipolar resistive switching characteristics of Cu/TaOx/Pt structures," J. Korean Phys. Soc., vol. 56, pp. 846-850, 2010.
59. Y. C. Yang, F. Pan, and F. Zeng, "Bipolar resistance switching in high-performance Cu/ZnO: Mn/Pt nonvolatile memories: Active region and influence of Joule heating," New J. Phys., vol. 12, 023008, 2010.
60. R. Pandian, B. J. Kooi, J. L. M. Oosthoek, P. van den Dool, G. Palasantzas, and A. Pauza, "Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation," Appl. Phys. Lett., vol. 95, 252109, 2009.
61. L. Tang, P. Zhou, Y. R. Chen, L. Y. Chen, H. B. Lv, T. A. Tang, and Y. Y. Lin, "Temperature and electrode-size dependences of the resistive switching characteristics of CuOx thin films," J. Korean Phys. Soc., vol. 53, no. 4, pp. 2283-2286, 2008.
62. J. K. Ahn, K. W. Park, S. G. Hur, N. J. Seong, C. S. Kim, J. Y. Lee, and S. G. Yoon, "Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications," J. Mater. Chem., vol. 20, pp. 1751-1754, 2010.
63. 0:5," Appl. Phys. Lett., vol. 91, 243513, 2007.
64. Y. Tsuji, T. Sakamoto, N. Banno, H. Hada, and M. Aono, "Off-state and turn-on characteristics of solid electrolyte switch," Appl. Phys. Lett., vol. 96, 023504, 2010.
65. M. Liu, Z. Abid, W. Wang, X. He, Q. Liu, and W. Guan, "Multilevel resistive switching with ionic and metallic filaments," Appl. Phys. Lett., vol. 94, 233106, 2009.
66. 3 ceramics," Solid State Commun., vol. 150, pp. 240-243, 2010.
67. 5 glasses," IONICS, vol. 16, pp. 185-192, 2010.