Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

Journal of Physics D: Applied Physics

Volumn 40, Issue 5, 2007, Pages 1426-1429

  Choi, Sangmoo ^a   Cha, Young Kwan ^a   Seo, Bum Seok ^a   Park, Sangjin ^a   Park, Ju Hee ^a   Shin, Sangmin ^a   Seol, Kwang Soo ^a   Park, Jong Bong ^a   Jung, Young Soo ^a   Park, Youngsoo ^a   Park, Yoondong ^a   Yoo, In Kyeong ^a   Choi, Suk Ho ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; FLASH MEMORY; HYSTERESIS; IRIDIUM COMPOUNDS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

DISCRETE CHARGE TRAPS; MEMORY STRUCTURES;

NANOBELTS;

EID: 33947655879     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/5/017     Document Type: Article

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