Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 959-963

  Di, Zengfeng ^a,b   Zhang, Miao ^a   Liu, Weili ^a   Shen, Qinwo ^a   Song, Zhitang ^a   Lin, Chenglu ^a   Huang, Anping ^b   Chu, Paul K ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Capacitance voltage; High k gate stack; Oxidation; SiGe on insulator

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); LAMINATES; OXIDATION; SILICON ON INSULATOR TECHNOLOGY;

CAPACITANCE VOLTAGE; HIGH-K GATE STACKS; NANOLAMINATES; SIGE ON INSULATORS;

NANOSTRUCTURED MATERIALS;

EID: 33846094003     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.011     Document Type: Article

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